Blue and green laser diodes with gallium nitride or indium gallium nitride cladding laser structure
First Claim
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1. A semiconductor laser comprising:
- an active region including at least one quantum well containing indium, gallium and nitride, the active region having a first side and a second side; and
, a first waveguide layer immediately adjacent to the first side, the first waveguide layer including indium, gallium and nitride.
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Abstract
A novel indium gallium nitride laser diode is described. The laser uses indium in either the waveguide layers and/or the cladding layers. It has been found that InGaN waveguide or cladding layers enhance optical confinement with very small losses. Furthermore, the use of InGaN waveguide or cladding layers can improve the structural integrity of active region epilayers because of reduced lattice mismatch between waveguide layers and the active region.
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Citations
28 Claims
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1. A semiconductor laser comprising:
an active region including at least one quantum well containing indium, gallium and nitride, the active region having a first side and a second side; and
, a first waveguide layer immediately adjacent to the first side, the first waveguide layer including indium, gallium and nitride.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. An indium gallium nitride semiconductor laser comprising:
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an active region including multiple quantum wells;
a first optical confinement region on a first side of the active region; and
,a second optical confinement region on a second side of the active region, at least one of the first optical confinement region and the second optical confinement region including indium, gallium and nitride. - View Dependent Claims (16, 17, 18, 19, 20, 21)
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22. An indium gallium nitride semiconductor laser comprising:
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an active region including indium gallium nitride multiple quantum wells;
a first indium gallium nitride waveguide layer on a first side of the active region; and
,a second indium gallium nitride waveguide layer on a second side of the active region, a first indium gallium nitride cladding layer adjacent the first waveguide layer; and
,a second indium gallium nitride cladding layer adjacent the second waveguide layer. - View Dependent Claims (23, 24, 25, 26, 27, 28)
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Specification