Organic silicate polymer and insulation film comprising the same

• US 20060127587A1
• Filed: 06/27/2003
• Published: 06/15/2006
• Est. Priority Date: 06/27/2002
• Status: Abandoned Application

• Current Assignee: LG Chem Limited (LG Corporation)
• Original Assignee: LG Chem Limited (LG Corporation)
• Inventors: Kim, Young-Duk, Ko, Min-Jin, Kang, Jung-won, Moon, Myung-Sun, Choi, Bum-Gyu, Park, Sang-Min, Shin, Dong-Seok, Kang, Gwi-Gwon, Kim, Byung-Ro, Nam, Hye-Yeong
• Application Number:
  US10/516,494
• Publication Number:
  US 20060127587A1
• Time in Patent Office: Days
• US Class Current: 427/387
• CPC Class Codes: C08G 77/48 in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms C08G77/42 takes precedence
• CPC Class Codes: C09D 183/14 in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms C09D183/10 takes precedence
• CPC Class Codes: H01L 21/02126 the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
• CPC Class Codes: H01L 21/02203 the layer being porous
• CPC Class Codes: H01L 21/02216 the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
• CPC Class Codes: H01L 21/02282 liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
• CPC Class Codes: H01L 21/3121 Layers comprising organo-silicon compounds
• CPC Class Codes: H01L 21/3122 layers comprising polysiloxane compounds
• CPC Class Codes: H01L 21/31695 Deposition of porous oxides or porous glassy oxides or oxide based porous glass
• CPC Class Codes: H01L 23/5222 Capacitive arrangements or effects of, or between wiring layers other capacitive arrangements H01L23/642
• CPC Class Codes: H01L 23/5329 Insulating materials
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

The present invention relates to a composition for forming a low dielectric insulating film for a semiconductor device, particularly to an organosilicate polymer prepared by mixing a thermally decomposable organic silane compound that is capped with a silane compound at both its ends, and a common silane compound or silane oligomer, and then adding water and a catalyst to conduct hydrolysis and condensation, as well as to a coating composition for an insulating film for a semiconductor device comprising the same, a coating composition for an insulating film for a semiconductor device further comprising a pore-forming organic substance, a method for preparing an insulating film for a semiconductor device by coating the composition and curing, and a semiconductor device comprising a low dielectric insulating film prepared by the method. The organosilicate polymer prepared according to the present invention has superior thermal stability and mechanical strength; an insulating film-forming composition comprising the same can be used for an interlayer insulating film for low dielectric wiring that can contribute to a high speed semiconductor, reduce power consumption, and remarkably decrease cross-talk between metal wiring; and a film obtained by applying the composition to an insulating film has superior coating properties, inhibits phase-separation, can easily control minute pores because organic substances are thermally decomposed to form pores during a curing process, and has superior insulating properties and a remarkably decreased film density.

Claims

1. A method for preparing an organosilicate polymer comprising the steps of mixing a thermally decomposable organic silane compound that is capped with silane compounds at both its ends, and a silane compound or a silane oligomer, and then adding water and a catalyst thereto to conduct hydrolysis and condensation.

2. The method for preparing an organosilicate polymer according to claim 1, wherein the thermally decomposable organic silane compound that is capped with silane compounds at both its ends are represented by the following Chemical Formula 1:

R¹_pR²_3-pSi-L—

SiR³_qR⁴_3-q 

 

[Chemical Formula 1]

wherein

R¹ and R³ are independently a hydrogen, fluorine, aryl, vinyl, allyl, or linear or branched C1-4 alkyl unsubstituted or substituted with fluorine;

R² and R⁴ are independently an acetoxy, hydroxyl, or linear or branched C1-4 alkoxy;

L is an organic substance that can be thermally decomposed at 450°

C. or less; and

p and q are respectively an integer of 0 to 2.

3. The method for preparing an organosilicate polymer according to claim 2, wherein the organic substance that can be thermally decomposed at 450°

C. or less is selected from a group consisting of ether, ester, anhydride, carbonate, carbamate, acrylate, epoxy, isocyanate, and amide compounds.

4. The method for preparing an organosilicate polymer according to claim 1, wherein the silane compound or silane oligomer is comprised of silicone, carbon, oxygen, and hydrogen.

5. The method for preparing an organosilicate polymer according to claim 1, wherein the silane compound or silane oligomer is selected from a group consisting of compounds represented by the following Chemical Formula 2, Chemical Formula 3, and Chemical Formula 4:

SiR⁵_xR⁶_4-x 

 

[Chemical Formula 2]

wherein

R⁵ is independently a hydrogen, fluorine, aryl, vinyl, allyl, or linear or branched C1-4 alkyl unsubstituted or substituted with fluorine;

R⁶ is independently an acetoxy, hydroxyl, or linear or branched C1-4 alkoxy; and

x is an integer of 0 to 2,

R⁷_yR⁸_3-ySi-M-SiR⁹_zR¹⁰_3-z 

 

[Chemical Formula 3]

wherein

R⁷ and R⁹ are independently a hydrogen, fluorine, aryl, vinyl, allyl, or linear or branched C1-4 alkyl unsubstituted or substituted with fluorine;

R⁸ and R¹⁰ are independently an acetoxy, hydroxyl, or linear or branched C-14 alkoxy;

M is C1-6 alkylene or phenylene; and

y and z are respectively an integer of 0 to 2,

[Chemical Formula 4]

wherein

R¹¹ are independently a hydrogen, fluorine, aryl, vinyl, allyl, or linear or branched C1-4 alkyl unsubstituted or substituted with fluorine;

R¹² is independently a hydroxy, or a linear or branched C-14 alkoxy; and

m and n are respectively an integer of 3 to 10.

6. An organosilicate polymer prepared by mixing a thermally decomposable organic silane compound that is capped with silane compounds at both its ends, and a silane compound or silane oligomer, and then adding water and a catalyst to conduct hydrolysis and condensation.

7. A coating composition for forming an insulating film, which comprises:

a) an organosilicate polymer comprising

i) a thermally decomposable organic silane compound that is capped with silane compounds at both its ends, and

ii) a silane compound or silane oligomer; and

b) an organic solvent.

8. A method for manufacturing a low dielectric insulating film for a semiconductor device, which comprises the steps of:

a) providing a solution of a coating composition for forming an insulating film comprising;

i) an organosilicate polymer comprising a thermally decomposable organic silane compound that is capped with silane compounds at both its ends, and a silane compound or silane oligomer, and

ii) an organic solvent;

b) coating the a) solution on a substrate of a semiconductor device to form an insulating film; and

c) drying and firing the b) coated insulating film.

9. An insulating film for a semiconductor device prepared by the method of claim 8.

10. A semiconductor device comprising an insulating film for a semiconductor device prepared by the method of claim 8.