In-line fabrication of curved surface transistors
First Claim
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1. A method for in-line fabrication of curved surface transistors comprising:
- forming a flexible substrate into a predetermined shape;
depositing a first passivation layer;
depositing a first metal layer in a first pattern;
depositing an insulator layer in a second pattern;
depositing a first semiconductor layer in a third pattern;
depositing a second semiconductor layer in a fourth pattern;
depositing a second metal layer in a fifth pattern; and
depositing a second passivation layer in a sixth pattern.
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Abstract
A method for in-line fabrication of curved surface transistors (10) forms a flexible substrate (12) into a predetermined shape. A first passivation layer (14) is deposited. A first metal layer (16) in a first pattern is deposited. An insulator layer (18) in a second pattern is deposited. A first semiconductor (20) in a third pattern and a second semiconductor (22) in a fourth pattern are deposited. A second metal layer (24) in a fifth pattern is deposited. A second passivation layer (28) in a sixth pattern is deposited.
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Citations
55 Claims
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1. A method for in-line fabrication of curved surface transistors comprising:
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forming a flexible substrate into a predetermined shape;
depositing a first passivation layer;
depositing a first metal layer in a first pattern;
depositing an insulator layer in a second pattern;
depositing a first semiconductor layer in a third pattern;
depositing a second semiconductor layer in a fourth pattern;
depositing a second metal layer in a fifth pattern; and
depositing a second passivation layer in a sixth pattern. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
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28. A method for fabrication of curved surface transistors comprising:
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forming a flexible substrate into a predetermined shape;
supporting said substrate in said flexible shape;
depositing a first passivation layer uniformly;
printing a first metal layer in a first pattern;
depositing an insulator layer in a second pattern;
depositing a first semiconductor layer in a third pattern;
depositing a second semiconductor layer in a fourth pattern;
printing a second metal layer in a fifth pattern; and
depositing a second passivation layer in a sixth pattern. - View Dependent Claims (29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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39. A method for in-line fabrication of a curved surface transistors comprising:
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forming a flexible substrate into a predetermined shape;
supporting said substrate in said flexible shape;
depositing a first uniform passivation layer;
printing a first metal layer in a first pattern;
depositing an insulator layer in a second pattern;
depositing a first semiconductor layer in a third pattern;
depositing a second semiconductor layer in a fourth pattern;
printing a second metal layer in a fifth pattern; and
depositing a second uniform passivation layer. - View Dependent Claims (40, 41, 42, 43, 44)
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45. A method for fabrication of a curved surface transistors comprising:
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forming a flexible substrate into a predetermined shape;
supporting said substrate in said predetermined shape;
depositing a first uniform passivation layer;
applying a first wax mask over said first uniform passivation layer;
printing a first metal layer in a first pattern;
removing said first wax mask;
depositing a first insulator layer;
depositing a first semiconductor layer;
depositing a second semiconductor layer;
forming a second pattern in said first and second semiconductor layer;
forming a third pattern in said insulator layer;
applying a second wax mask;
printing a second metal layer in a fourth pattern;
removing said second wax mask;
removing said second semiconductor layer in a back channel region;
depositing a second uniform passivation layer; and
forming a fifth pattern in said second uniform passivation layer. - View Dependent Claims (46, 47, 48)
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49. An apparatus for in-line fabrication of transistors on a curved surface of a flexible substrate comprising:
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a plurality of curved web mounts wherein each web mount encloses deposition equipment;
a first curved web mount wherein first deposition equipment deposits a passivation layer on said substrate;
a second curved web mount wherein second deposition equipment deposits a first metal layer in a first pattern;
a third curved web mount wherein third deposition equipment deposits an insulator layer, a first semiconductor layer, and a second semiconductor layer;
a fourth curved web mount wherein fourth deposition equipment pattern said first and second semiconductor layer in a second pattern;
a fifth curved web mount wherein fifth deposition equipment deposits a second metal layer in a third pattern; and
a sixth curved web mount wherein sixth deposition equipment etches and passivates. - View Dependent Claims (50)
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51. An apparatus for in-line fabrication of transistors on a curved surface of a flexible substrate comprising:
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a pair of separable web mounts;
a plurality of deposition equipments comprising;
a first deposition equipment which deposits a passivation layer on said substrate;
a second deposition equipment which deposits a first metal layer in a first pattern;
a third deposition equipment which deposits an insulator layer, a first semiconductor layer, and a second semiconductor layer;
a fourth deposition equipment which pattern said first and second semiconductor layer in a second pattern;
a fifth deposition equipment which deposits a second metal layer in a third pattern; and
a sixth which deposition equipment etches and passivates. - View Dependent Claims (52, 53, 54, 55)
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Specification