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Method and system for providing a highly textured magnetoresistance element and magnetic memory

  • US 20060128038A1
  • Filed: 12/05/2005
  • Published: 06/15/2006
  • Est. Priority Date: 12/06/2004
  • Status: Abandoned Application
First Claim
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1. A magnetic element comprising:

  • a pinned layer;

    a spacer layer, the spacer layer being insulating and having an ordered crystal structure, the spacer layer being configured to allow tunneling through the spacer layer;

    a free layer, the spacer layer residing between the pinned layer and the free layer; and

    wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

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