Method and system for providing a highly textured magnetoresistance element and magnetic memory

• US 20060128038A1
• Filed: 12/05/2005
• Published: 06/15/2006
• Est. Priority Date: 12/06/2004
• Status: Abandoned Application

• Current Assignee: Grandis, Inc. (Samsung Electronics Co. Ltd.)
• Original Assignee: Grandis, Inc. (Samsung Electronics Co. Ltd.)
• Inventors: Huai, Yiming, Diao, Zhitao, Pakala, Mahendra, Valet, Thierry
• Application Number:
  US11/294,766
• Publication Number:
  US 20060128038A1
• Time in Patent Office: Days
• US Class Current: 438/4
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: B82Y 40/00 Manufacture or treatment of nanostructures
• CPC Class Codes: H01F 10/3254 the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
• CPC Class Codes: H01F 10/3263 the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
• CPC Class Codes: H01F 10/3272 by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
• CPC Class Codes: H01F 10/3281 only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
• CPC Class Codes: H01F 41/302 for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices spin-exchange-coupled multilayers H01F10/32
• CPC Class Codes: H01F 41/325 applying a noble metal capping on a spin-exchange-coupled multilayer, e.g. spin filter deposition
• CPC Class Codes: H10N 50/10 Magnetoresistive devices

Abstract

A method and system for providing a magnetic element are disclosed. The method and system include providing a pinned layer, a free layer, and a spacer layer between the pinned layer and the free layer. The spacer layer is insulating and has an ordered crystal structure. The spacer layer is also configured to allow tunneling through the spacer layer. In one aspect, the free layer is comprised of a single magnetic layer having a particular crystal structure and texture with respect to the spacer layer. In another aspect, the free layer is comprised of two sublayers, the first sublayer having a particular crystal structure and texture with respect to the spacer layer and the second sublayer having a lower moment. In still another aspect, the method and system also include providing a second pinned layer and a second spacer layer that is nonmagnetic and resides between the free layer and the second pinned layer. The magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

Claims

1. A magnetic element comprising:

a pinned layer;

a spacer layer, the spacer layer being insulating and having an ordered crystal structure, the spacer layer being configured to allow tunneling through the spacer layer;

a free layer, the spacer layer residing between the pinned layer and the free layer; and

wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

2. The magnetic element of claim 1 wherein the pinned layer has a first crystallographic texture and the spacer layer has a second crystallographic texture.

3. The magnetic element of claim 2 wherein the first crystallographic texture and the second crystallographic texture are related to each other and all (100) oriented.

4. The magnetic element of claim 2 wherein at least a portion of the free layer has a third crystallographic texture.

5. The magnetic element of claim 4 wherein the first crystallographic texture, the second crystallographic texture, and the third crystallographic texture are related to one and another, and all (100) oriented.

6. The magnetic element of claim 1 wherein the free layer includes a single layer having a second ordered crystal structure, or a first sublayer having a first magnetization and a second sublayer having a second magnetization, the first sublayer residing between the spacer layer and the second sublayer, the first sublayer having a second ordered crystal structure, the first magnetization and the second magnetization being coupled.

7. The magnetic element of claim 6 wherein the single free layer or the first sublayer includes at least one of Co, Fe, Ni, Cr, and Mn, or an amorphous alloy including at least one of Co, Fe, Ni, and Cr, with at least one of B, P, Si, Nb, Zr, Hf, Ta, Ti.

8. The magnetic element of claim 1 wherein the pinned layer includes a single layer having a first ordered crystal structure, or synthetic layers with first sublayer having a first magnetization and a second sublayer having a second magnetization, the second sublayer residing adjacent to the spacer layer, the second sublayer having a first ordered crystal structure, the first magnetization and the second magnetization being coupled.

9. The magnetic element of claim 8 wherein the single pinned layer or the second sublayer includes at least one of Co, Fe, Ni, Cr, and Mn, or an amorphous alloy including at least one of Co, Fe, Ni, and Cr, with at least one of B, P, Si, Nb, Zr, Hf, Ta, Ti.

10. The magnetic element of claim 6 wherein the second sublayer is of the form MX, where M includes at least one of Co, Fe, Ni, Cr and Mn and X includes at least one of B, Ta, Pd, Pt or Cr.

11. The magnetic element of claim 6 wherein the first sublayer has a first crystallographic texture, wherein the spacer layer has a second crystallographic texture and wherein the first crystallographic texture and the second crystallographic texture are related to each other and all (100) oriented.

12. The magnetic element of claim 6 wherein the second sublayer has a low magnetization.

13. The magnetic element of claim 12 wherein the low magnetization is less than or equal to 1100 emu/cubic centimeter.

14. The magnetic element of claim 1 wherein the pinned layer is a synthetic pinned layer including a first ferromagnetic layer, a second ferromagnetic, and a nonmagnetic spacer layer configured to magnetically couple the first ferromagnetic layer and the second ferromagnetic layer.

15. The magnetic element of claim 1 wherein the pinned layer includes a first ferromagnetic layer and a second ferromagnetic layer, the second ferromagnetic layer having a texture and residing between the first layer and the spacer layer.

16. The magnetic element of claim 15 wherein the pinned layer further includes a nonmagnetic spacer layer between the first ferromagnetic layer and the second ferromagnetic layer, the nonmagnetic spacer layer including at least one of Ir, Ru, Rh, and Cu.

17. A magnetic element comprising:

a pinned layer;

a spacer layer, the spacer layer being insulating and having a first ordered crystal structure, the spacer layer being configured to allow tunneling through the spacer layer;

a free layer, the spacer layer residing between the pinned layer and the free layer, the free layer includes a first sublayer having a first magnetization and a second sublayer having a second magnetization and a reduced magnetic moment, the first sublayer residing between the spacer layer and the second sublayer, the first sublayer having a second ordered crystal structure, the first magnetization and the second magnetization being coupled; and

wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

18. The magnetic element of claim 17 wherein the pinned layer has a first texture, the spacer layer has a second texture, and the free layer has a third texture, the first texture, the second texture, and the third texture being related to one and another and all (100) oriented.

19. The magnetic element of claim 17 wherein the first sublayer includes at least one of Co, Fe, Ni, Cr, and Mn, or an amorphous alloy including at least one of Co, Fe, Ni, and Cr, with at least one of B, P, Si, Nb, Zr, Hf, Ta, Ti.

20. The magnetic element of claim 17 wherein the pinned layer includes at least one of Co, Fe, Ni, Cr, and Mn, or an amorphous alloy including at least one of Co, Fe, Ni, and Cr, with at least one of B, P, Si, Nb, Zr, Hf, Ta, Ti.

21. The magnetic element of claim 17 wherein the second sublayer is of the form MX, where M includes at least one of Co, Fe, Ni, Cr and Mn and X includes at least one of B, Ta, Pd, Pt or Cr.

22. The magnetic element of claim 17 wherein the low magnetization is less than or equal to 1100 emu/cubic centimeter.

23. The magnetic element of claim 17 wherein the pinned layer is a synthetic pinned layer including a first ferromagnetic layer, a second ferromagnetic, and a nonmagnetic spacer layer configured to magnetically couple the first ferromagnetic layer and the second ferromagnetic layer.

24. The magnetic element of claim 23 wherein the pinned layer further includes a nonmagnetic spacer layer between the first ferromagnetic layer and the second ferromagnetic layer, the nonmagnetic spacer layer including at least one of Ir, Ru, Rh, and Cu.

25. The magnetic element of claim 17 wherein the spacer layer includes at least ten atomic percent Mg.

26. The magnetic element of claim 25 wherein the spacer layer is MgO.

27. The magnetic element of claim 17 wherein the pinned layer has a body centered cubic structure, the first ordered crystal structure is an NaCl structure, and the second ordered crystal structure is body centered cubic.

28. The magnetic element of claim 17 wherein the second sublayer is amorphous.

29. The magnetic element of claim 17 wherein the free layer further includes a nonmagnetic spacer layer between the first sublayer and the second sublayer.

30. The magnetic element of claim 17 further comprising:

a spin accumulation layer, the free layer residing between the spacer layer and the spin accumulation layer.

31. The magnetic element of claim 30 wherein the spin accumulation layer includes at least one of Cu and Ru.

32. The magnetic element of claim 30 further comprising:

a spin barrier layer, the spin accumulation layer residing between the free layer and the spin barrier layer.

33. The magnetic element of claim 17 wherein the free layer is closer to a substrate than the pinned layer.

34. The magnetic element of claim 17 wherein the pinned layer is closer to a substrate than the free layer.

35. A magnetic element comprising:

a first pinned layer;

an insulating spacer layer, the insulating spacer layer being insulating and having an ordered crystal structure, the insulating spacer layer being configured to allow tunneling through the insulating spacer layer;

a free layer, the insulating spacer layer residing between the pinned layer and the free layer;

a spacer layer, the spacer being nonmagnetic and either a conductive layer or an insulating tunneling layer, the free layer residing between the insulating spacer layer and the spacer layer;

a second pinned layer, the spacer layer residing between the free layer and the second pinned layer; and

wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

36. A magnetic element comprising:

a first pinned layer;

an insulating spacer layer, the insulating spacer layer being insulating and having a first ordered crystal structure and a second texture, the insulating spacer layer being configured to allow tunneling through the insulating spacer layer;

a free layer, the insulating spacer layer residing between the pinned layer and the free layer, the free layer includes a first sublayer having a first magnetization and a second sublayer having a second magnetization, the first sublayer residing between the insulating spacer layer and the second sublayer, the first sublayer having a second ordered crystal structure with a third texture, the first magnetization and the second magnetization being coupled;

a spacer layer, the spacer being nonmagnetic and either conductive or insulating tunneling layer, the free layer residing between the insulating spacer layer and the spacer layer;

a second pinned layer, the spacer layer residing between the free layer and the second pinned layer;

wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

37. The magnetic element of claim 36 wherein the first pinned layer has a first texture, the insulating spacer layer has a second texture, and the free layer has a third texture, the first texture, the second texture, and the third texture having a particular crystallographic orientation relationship.

38. The magnetic element of claim 36 wherein the first sublayer includes at least one of Co, Fe, Ni, Cr, and Mn, or an amorphous alloy including at least one of Co, Fe, Ni, and Cr, with at least one of B, P, Si, Nb, Zr, Hf, Ta, Ti.

39. The magnetic element of claim 36 wherein the first pinned layer includes at least one of Co, Fe, Ni, Cr, and Mn, or an amorphous alloy including at least one of Co, Fe, Ni, and Cr, with at least one of B, P, Si, Nb, Zr, Hf, Ta, Ti.

40. The magnetic element of claim 36 wherein the second sublayer has a low magnetic moment.

41. The magnetic element of claim 36 wherein the second sublayer is of the form MX, where M includes at least one of Co, Fe, Ni Cr and Mn and X includes at least one of B, Ta, Pd, Pt or Cr

42. The magnetic element of claim 40 wherein the low magnetic moment is less than or equal to 1100 emu/cubic centimeter.

43. The magnetic element of claim 36 wherein at least one of the first pinned layer and the second pinned layer is a synthetic pinned layer including a first ferromagnetic layer, a second ferromagnetic, and a nonmagnetic spacer layer configured to magnetically couple the first ferromagnetic layer and the second ferromagnetic layer.

44. The magnetic element of claim 36 wherein the insulating spacer layer includes at least ten atomic percent Mg.

45. The magnetic element of claim 44 wherein the insulating spacer layer is MgO.

46. The magnetic element of claim 36 wherein the first pinned layer has a body centered cubic structure, the first ordered crystal structure is an NaCl structure, and the second ordered crystal structure is body centered cubic.

47. The magnetic element of claim 36 wherein the second sublayer is amorphous.

48. The magnetic element of claim 36 wherein the free layer further includes a nonmagnetic spacer layer between the first sublayer and the second sublayer.

49. The magnetic element of claim 36 further comprising:

a spin accumulation layer, the spin accumulation layer residing between the spacer layer and the second pinned layer.

50. The magnetic element of claim 49 wherein the spin accumulation layer includes at least one of Cu and Ru.

51. The magnetic element of claim 49 further comprising:

a spin barrier layer, the spin barrier layer residing between the spin accumulation layer and the second pinned layer.

52. The magnetic element of claim 36 wherein the free layer is closer to a substrate than the first pinned layer.

53. The magnetic element of claim 36 wherein the first pinned layer is closer to a substrate than the free layer.

54. The magnetic element of claim 36 wherein the pinned layer includes a first layer and a second layer, the second layer residing between the first layer and the spacer layer.

55. A method for providing a magnetic element comprising:

providing a pinned layer;

providing a spacer layer, the spacer layer being insulating and having an ordered crystal structure, the spacer layer being configured to allow tunneling through the spacer layer;

providing a free layer, the spacer layer residing between the pinned layer and the free layer; and

wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.

56. The method of claim 55 wherein the free layer providing step further includes:

providing a first sublayer having a first magnetization; and

providing a second sublayer having a second magnetization, the first sublayer residing between the spacer layer and the second sublayer, the first sublayer having a second ordered crystal structure, the first magnetization and the second magnetization being coupled.

57. The method of claim 56 wherein the first sublayer has a first crystallographic texture and wherein the spacer layer has a second crystallographic texture, the first crystallographic texture and the second crystallographic texture are related to each other and all (100) oriented.

58. The method of claim 55 wherein the pinned layer is a synthetic pinned layer including a first ferromagnetic layer, a second ferromagnetic, and a nonmagnetic spacer layer configured to magnetically couple the first ferromagnetic layer and the second ferromagnetic layer.

59. A method for providing magnetic element comprising:

providing a first pinned layer;

providing an insulating spacer layer, the insulating spacer layer being insulating and having an ordered crystal structure, the insulating spacer layer being configured to allow tunneling through the insulating spacer layer;

providing a free layer, the insulating spacer layer residing between the pinned layer and the free layer;

providing a spacer layer, the spacer being nonmagnetic and either conductive or insulating, the free layer residing between the insulating spacer layer and the spacer layer; and

providing a second pinned layer, the spacer layer residing between the free layer and the second pinned layer;

wherein the magnetic element is configured to allow the free layer to be switched due to spin transfer when a write current is passed through the magnetic element.