Ruthenium as an underlayer for tungsten film deposition
First Claim
1. A method for depositing a tungsten-containing layer on a substrate, comprising:
- depositing a metal-containing barrier layer on the substrate;
depositing a ruthenium layer on the metal-containing layer;
depositing a tungsten nucleation layer on the ruthenium layer; and
depositing a tungsten bulk layer on the tungsten nucleation layer.
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Accused Products
Abstract
In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer. The method further includes depositing a tungsten nucleation layer on the ruthenium layer and depositing a tungsten bulk layer on the tungsten nucleation layer. The barrier layer, the ruthenium layer, the tungsten nucleation layer and the tungsten bulk layer are independently deposited by an ALD process, a CVD process or a PVD process, preferably by an ALD process. In some examples, the substrate is exposed to a soak process prior to depositing a subsequent layer, such as between the deposition of the barrier layer and the ruthenium layer, the ruthenium layer and the tungsten nucleation layer or the tungsten nucleation layer and the tungsten bulk layer.
267 Citations
28 Claims
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1. A method for depositing a tungsten-containing layer on a substrate, comprising:
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depositing a metal-containing barrier layer on the substrate;
depositing a ruthenium layer on the metal-containing layer;
depositing a tungsten nucleation layer on the ruthenium layer; and
depositing a tungsten bulk layer on the tungsten nucleation layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method for depositing a tungsten-containing film on a substrate, comprising:
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depositing a tantalum-containing barrier layer on the substrate by a first atomic layer deposition process;
depositing a ruthenium layer on the tantalum-containing layer by a second atomic layer deposition process;
exposing the ruthenium layer to a soak process; and
depositing a tungsten nucleation layer on the ruthenium layer by a third atomic layer deposition process. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24, 25, 26)
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27. A method for depositing a tungsten-containing film on a substrate, comprising:
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depositing a ruthenium layer on the substrate by a first atomic layer deposition process;
exposing the ruthenium layer to a soak process comprising flowing a soak compound for a predetermined time in a range from about 5 seconds to about 90 seconds, wherein the soak compound is selected from the group consisting of hydrogen, borane, diborane, silane, disilane, trisilane, dichlorosilane, derivatives thereof and combinations thereof; and
depositing a tungsten nucleation layer on the ruthenium layer by a second atomic layer deposition process.
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28. A method of forming a ruthenium layer on a substrate for use in integrated circuit fabrication, comprising:
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depositing a barrier layer on a substrate surface by a first deposition process, wherein the barrier layer is selected from the group consisting of tantalum, tantalum nitride, tantalum silicon nitride, titanium, titanium nitride, titanium silicon nitride, tungsten, tungsten nitride and combinations thereof;
depositing the ruthenium layer on the barrier layer by a first ALD process, comprising sequentially exposing the barrier layer to a ruthenium-containing compound and a reagent; and
depositing a tungsten layer on the ruthenium layer by a second ALD process, comprising sequentially exposing the ruthenium layer to a tungsten-containing compound and a reductant.
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Specification