Process for producing silicon carbide crystals having increased minority carrier lifetimes
First Claim
Patent Images
1. A process for producing silicon carbide crystals having increased minority carrier lifetimes, comprising:
- heating a silicon carbide crystal having a first concentration of minority carrier recombination centers resulting in a first minority carrier lifetime and thereafter cooling the heated silicon carbide crystal at a rate sufficiently slow to provide a silicon carbide crystal having a second concentration of minority carrier recombination centers that is lower than the first concentration thereby providing a material having an increased minority carrier lifetime.
3 Assignments
0 Petitions
Accused Products
Abstract
A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.
-
Citations
31 Claims
-
1. A process for producing silicon carbide crystals having increased minority carrier lifetimes, comprising:
heating a silicon carbide crystal having a first concentration of minority carrier recombination centers resulting in a first minority carrier lifetime and thereafter cooling the heated silicon carbide crystal at a rate sufficiently slow to provide a silicon carbide crystal having a second concentration of minority carrier recombination centers that is lower than the first concentration thereby providing a material having an increased minority carrier lifetime. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 20, 21, 22)
- 17. A bulk silicon carbide single crystal having a minority carrier lifetime of at least about 1 microseconds.
- 23. A semiconductor device comprising a silicon carbide single crystal having a minority carrier lifetime of at least about 1 microseconds.
-
26. A process for the production of a device comprising a silicon carbide crystal exhibiting increased minority carrier lifetime, comprising:
-
heating a silicon carbide crystal having a first concentration of minority carrier recombination centers resulting in a first minority carrier lifetime and thereafter cooling the heated silicon carbide crystal at a rate sufficiently slow to provide a silicon carbide crystal having a second concentration of minority carrier recombination centers that is lower than the first concentration thereby providing a material having an increased minority carrier lifetime; and
incorporating said silicon carbide crystal into a device. - View Dependent Claims (27, 28, 29, 30, 31)
-
Specification