Apparatus for generating plasma by RF power

• US 20060130971A1
• Filed: 05/24/2005
• Published: 06/22/2006
• Est. Priority Date: 12/21/2004
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Kao, Chien-Teh, Chang, Mei, Tzu, Gwo-Chuan, Chang, Yu, Umotoy, Salvador P., Kuang, William, Yuan, Xiaoxiong
• Application Number:
  US11/137,200
• Publication Number:
  US 20060130971A1
• Time in Patent Office: Days
• US Class Current: 156/345.480
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32357 Generation remote from the workpiece, e.g. down-stream
• CPC Class Codes: H01J 37/32541 Shape
• CPC Class Codes: H01L 21/28247 passivation or protection of the electrode, e.g. using re-oxidation
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H01L 29/665 using self aligned silicidation, i.e. salicide formation of conductive layers comprising silicides H01L21/28518

Abstract

A method and apparatus for processing a substrate is provided. In one aspect, the chamber comprises a chamber body and a support assembly at least partially disposed within the chamber body adapted to support a substrate thereon. The chamber further comprises a lid assembly disposed on an upper surface of the chamber body. The lid assembly includes a top plate and a gas delivery assembly which define a plasma cavity therebetween, wherein the gas delivery assembly is adapted to heat the substrate. A remote plasma source having a U-shaped plasma region is connected to the gas delivery assembly.

Claims

1. A processing chamber for a substrate, comprising:

a chamber body defining a processing region;

a support assembly at least partially disposed within the chamber body and adapted to support a substrate within the processing region; and

a plasma source having a cylindrical electrode and a ground electrode defining a plasma region in communication with the processing region.

2. The chamber of claim 1, wherein the ground electrode is a cup-shaped electrode spaced apart from the cylindrical electrode.

3. The chamber of claim 1, wherein the cylindrical electrode is coupled to a radio frequency source, microwave source, or a source of direct current or alternating current.

4. The chamber of claim 3, wherein the cylindrical electrode is coupled to a radio frequency source.

5. The chamber of claim 4, wherein the ground electrode has greater surface area than the cylindrical electrode.

6. The chamber of claim 1, wherein the ground electrode is below the cylindrical electrode.

7. The chamber of claim 1, further comprising one or more fluid channels for flowing heat transfer medium through the support assembly.

8. A processing chamber for a substrate, comprising:

a chamber body defining a processing region;

a support assembly at least partially disposed within the chamber body and adapted to support a substrate within the processing region; and

a remote plasma source having a cylindrical electrode and a ground electrode defining a remote plasma region in communication with the processing region.

9. The chamber of claim 8, further comprising one or more fluid channels for flowing a heat transfer medium through the support assembly.

10. The chamber of claim 8, wherein the ground electrode is a cup-shaped electrode spaced apart from the cylindrical electrode.

11. The chamber of claim 8, wherein the cylindrical electrode is coupled to a radio frequency source, microwave source, or a source of direct current or alternating current.

12. The chamber of claim 11, wherein the cylindrical electrode is coupled to a radio frequency source.

13. The chamber of claim 12, wherein the ground electrode has greater surface area than the cylindrical electrode.

14. The chamber of claim 8, wherein the ground electrode is below the cylindrical electrode.

15. A processing chamber for a substrate, comprising:

a chamber body defining a processing region;

a support assembly at least partially disposed within the chamber body and adapted to support a substrate within the processing region; and

a cylindrical electrode and a cup-shaped electrode defining a plasma region in communication with the processing region.

16. The chamber of claim 15, further comprising one or more fluid channels for flowing a heat transfer medium through the support assembly.

17. The chamber of claim 15, wherein the plasma source is a remote plasma source.

18. The chamber of claim 15, wherein the cylindrical electrode is coupled to a radio frequency source, microwave source, or a source of direct current or alternating current.

19. The chamber of claim 15, wherein the cup-shaped electrode has greater surface area than the cylindrical electrode.

20. The chamber of claim 15, wherein the cup-shaped electrode is below the cylindrical electrode.