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Nitride semiconductor device

  • US 20060131604A1
  • Filed: 02/07/2006
  • Published: 06/22/2006
  • Est. Priority Date: 07/07/2000
  • Status: Active Grant
First Claim
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1. A nitride semiconductor device having a structure wherein an active layer of a quantum well structure, which has a well layer made of a nitride semiconductor that includes In and a barrier layer made of a nitride semiconductor, is sandwiched between a p-type nitride semiconductor layer and an n-type nitride semiconductor layer, wherein said active layer has 2 or more well layers, a first barrier layer arranged in a position nearest to said p-type nitride semiconductor layer, a second barrier layer that is different from the first barrier layer and a third barrier layer intervened between the well layers and sandwiched by said first barrier layer and said second barrier layer;

  • the film thickness of said third barrier layer being smaller than the film thickness of said first barrier layer and said second barrier layer;

    the film thickness of said first barrier layer being approximately the same as that of said second barrier layer.

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