Nitride semiconductor device
First Claim
1. A nitride semiconductor device having a structure wherein an active layer of a quantum well structure, which has a well layer made of a nitride semiconductor that includes In and a barrier layer made of a nitride semiconductor, is sandwiched between a p-type nitride semiconductor layer and an n-type nitride semiconductor layer, wherein said active layer has 2 or more well layers, a first barrier layer arranged in a position nearest to said p-type nitride semiconductor layer, a second barrier layer that is different from the first barrier layer and a third barrier layer intervened between the well layers and sandwiched by said first barrier layer and said second barrier layer;
- the film thickness of said third barrier layer being smaller than the film thickness of said first barrier layer and said second barrier layer;
the film thickness of said first barrier layer being approximately the same as that of said second barrier layer.
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Abstract
In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.
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Citations
22 Claims
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1. A nitride semiconductor device having a structure wherein an active layer of a quantum well structure, which has a well layer made of a nitride semiconductor that includes In and a barrier layer made of a nitride semiconductor, is sandwiched between a p-type nitride semiconductor layer and an n-type nitride semiconductor layer,
wherein said active layer has 2 or more well layers, a first barrier layer arranged in a position nearest to said p-type nitride semiconductor layer, a second barrier layer that is different from the first barrier layer and a third barrier layer intervened between the well layers and sandwiched by said first barrier layer and said second barrier layer; the film thickness of said third barrier layer being smaller than the film thickness of said first barrier layer and said second barrier layer;
the film thickness of said first barrier layer being approximately the same as that of said second barrier layer.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A nitride semiconductor device having a structure wherein an active layer of a quantum well structure, which has a well layer made of a nitride semiconductor that includes In and a barrier layer made of a nitride semiconductor, is sandwiched between a p-type nitride semiconductor layer and an n-type nitride semiconductor layer,
wherein said active layer has 2 or more well layers, a first barrier layer arranged in a position nearest to said p-type nitride semiconductor layer, a second barrier layer that is different from the first barrier layer and a third barrier layer intervened between the well layers and sandwiched by said first barrier layer and said second barrier layer; -
the n-type impurity concentration of said first barrier layer being not greater than 1×
1017/cm3 and the n-type concentration of said second barrier layer is not less than 5×
1017/cm3;
the film thickness of said third barrier layer being smaller than the film thickness of said first barrier layer and said second barrier layer;
the film thickness of said first barrier layer being approximately the same as that of said second barrier layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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Specification