System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques
First Claim
1. A process for processing at least one section of each of a plurality of semiconductor film samples, comprising the steps of:
- (a) controlling an irradiation beam source to emit successive irradiation beam pulses at a predetermined repetition rate;
(b) using the emitted beam pulses, irradiating the at least one section of a first sample of the semiconductor film samples using at least one of a first sequential lateral solidification (“
SLS”
) technique and a first uniform small grained material (“
UGS”
) technique to process the at least one section of the first sample;
(c) upon the completion of step (b), redirecting the beam pulses to impinge the at least one section of a second sample of the semiconductor film samples; and
(d) using the redirected beam pulses, irradiating the at least one section of the second sample using at least one of a second SLS technique and second UGS techniques to process the at least one section of the second sample, the first and second techniques being one of different from one another and substantially the same.
1 Assignment
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Accused Products
Abstract
A process and system are provided for processing at least one section of each of a plurality of semiconductor film samples. In these process and system, the irradiation beam source is controlled to emit successive irradiation beam pulses at a predetermined predetermined repetition rate. Using such emitted beam pulses, at least one section of one of the semiconductor film samples is irradiated using a first sequential lateral solidification (“SLS”) technique and/or a first uniform small grained material (“UGS”) techniques to process the such sections) of the first sample. Upon the completion of the processing of this section of the first sample, the beam pulses are redirected to impinge at least one section of a second sample of the semiconductor film samples. Then, using the redirected beam pulses, such sections) of the second sample are irradiated using a second SLS technique and/or a second UGS technique to process the at least one section of the second sample. The first and second techniques can be different from one another or substantially the same.
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Citations
16 Claims
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1. A process for processing at least one section of each of a plurality of semiconductor film samples, comprising the steps of:
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(a) controlling an irradiation beam source to emit successive irradiation beam pulses at a predetermined repetition rate;
(b) using the emitted beam pulses, irradiating the at least one section of a first sample of the semiconductor film samples using at least one of a first sequential lateral solidification (“
SLS”
) technique and a first uniform small grained material (“
UGS”
) technique to process the at least one section of the first sample;
(c) upon the completion of step (b), redirecting the beam pulses to impinge the at least one section of a second sample of the semiconductor film samples; and
(d) using the redirected beam pulses, irradiating the at least one section of the second sample using at least one of a second SLS technique and second UGS techniques to process the at least one section of the second sample, the first and second techniques being one of different from one another and substantially the same. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A system for processing at least one section of each of a plurality of semiconductor film samples, comprising:
a processing arrangement which, when executing a set of instruction, is operable to;
(a) control an irradiation beam source to emit successive irradiation beam pulses at a predetermined repetition rate, (b) using the emitted beam pulses, direct the beam pulse to irradiate the at least one section of a first sample of the semiconductor film samples using at least one of a first sequential lateral solidification (“
SLS”
) technique and a first uniform small grained materials(“
UGS”
) technique to process the at least one section of the first sample,(c) upon the completion of the processing of the at least one section of the first sample, effect a redirection of the beam pulses to impinge the at least one section of a second sample of the semiconductor film samples, and (d) direct the redirected beam pulse to irradiate the at least one section of the second sample using at least one of a second SLS technique and a second UGS technique to process the at least one section of the second sample, the first and second techniques being one of different from one another and substantially the same. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16)
Specification