Atomic layer deposition apparatus

• US 20060137608A1
• Filed: 12/27/2005
• Published: 06/29/2006
• Est. Priority Date: 12/28/2004
• Status: Abandoned Application

• Current Assignee: Asm Genitech Korea Ltd. (ASM International NV)
• Original Assignee: Asm Genitech Korea Ltd. (ASM International NV)
• Inventors: Lee, Chun Soo, Choi, Seung Woo, Park, Kwang Lae
• Application Number:
  US11/318,786
• Publication Number:
  US 20060137608A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/14 Deposition of only one other metal element
• CPC Class Codes: C23C 16/45512 Premixing before introduction in the reaction chamber
• CPC Class Codes: C23C 16/45536 Use of plasma, radiation or electromagnetic fields
• CPC Class Codes: C23C 16/45544 characterized by the apparatus
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45591 Fixed means, e.g. wings, baffles
• CPC Class Codes: C23C 16/515 using pulsed discharges

Abstract

An atomic layer deposition (ALD) apparatus is, suitable for thermal ALD and plasma-enhanced ALD of conductive and non-conductive films. The ALD apparatus can maintain electrical insulation of a gas dispersion structure, such as a showerhead assembly, which acts as an RF electrode to generate plasma inside a reaction chamber while depositing electrically conductive films in the reaction chamber. Fine tubules of micro-feeding tube assembly prevents plasma generation in them and reactive gases each have separate flow paths through the micro-feeding tube assembly. Process gases out of the micro-feeding tube assembly enter narrow grooves of a helical flow inducing plate and form helical flows which mix well each other. Symmetrically mounted pads on showerhead assembly and flow guiding plate maintain a symmetrical gap through which an inert gas flows continuously to keep reactive gases outside the gap and unwanted film deposition in the gap. Longer operating time before maintenance (cleaning) and thus higher productivity can be achieved.

Claims

1. An ALD apparatus for depositing a thin film on a substrate, comprising:

a substrate support;

a reaction chamber wall formed above the substrate support and defining a reaction chamber;

a gas inflow tube connected to a source of process gas and communicating with the reaction chamber;

a showerhead assembly which defines a reaction space together with the substrate support, the assembly including a plurality of holes connected to the gas inflow tube to supply the gas to the reaction space;

a showerhead insulating plate made of an insulating material and disposed on the showerhead assembly;

a gas flow guiding plate disposed between the showerhead insulating plate and the reaction chamber wall;

a gas outlet for venting gas from the reaction chamber; and

a RF connection port connected the showerhead assembly to supply RF power,

wherein gas passages are formed between the showerhead assembly and the showerhead insulating plate, between the showerhead insulating plate and the gas flow guiding plate, and between the gas flow guiding plate and the reaction chamber wall.

2. The ALD apparatus of claim 1, further comprising a plurality of pads symmetrically formed between the showerhead assembly and the showerhead insulating plate, wherein a width of the gas passage between the showerhead assembly and the showerhead insulating plate is defined by heights of the pads.

3. The ALD apparatus of claim 2, wherein the pads are machined directly on the showerhead insulating plate or the showerhead assembly.

4. The ALD apparatus of claim 1, further comprising a plurality of pads symmetrically formed between the gas flow guiding plate and the reaction chamber wall, wherein a width of the gas passage between the gas flow guiding plate and the reaction chamber wall is defined by heights of the pads.

5. The ALD apparatus of claim 4, wherein the pads are machined directly on the gas flow guiding plate or the reaction chamber wall.

6. The ALD apparatus of claim 1, further comprising a gas manifold having gas inlets and outlets.

7. The ALD apparatus of claim 1, wherein the RF connection port passes through the reaction chamber wall and is connected to the showerhead assembly and electrically insulated from the reaction chamber wall.

8. The ALD apparatus of claim 1, further comprising a heating plate disposed under the substrate support to heat the substrate.

9. The ALD apparatus of claim 1, further comprising a heater provided on the reaction chamber wall.

10. The ALD apparatus of claim 1, wherein the substrate support comprises a pedestal configured to lift up to contact the reaction chamber wall to define the reaction chamber, and configured to move down to be separated from the reaction chamber wall, so that the substrate can be mounted or detached.

11. An ALD apparatus for depositing a thin film on a substrate, comprising:

a substrate support;

a reaction chamber wall formed above the substrate support and defining a reaction chamber;

a gas inflow tube having a plurality of separate gas inlets through which a plurality of reaction gases communicate with the reaction chamber;

a gas dispersion structure which defines a reaction space together with the substrate support and is connected to the gas inflow tube to supply the gas to the reaction space;

a micro-feeding tube assembly disposed between the gas inflow tube and the showerhead assembly and having a plurality of fine tubules; and

a helical flow inducing plate disposed between the micro-feeding tube assembly and the gas dispersion structure.

12. The ALD apparatus of claim 11, wherein the micro-feeding tube assembly comprises an electrically conductive micro-feeding tube sub-assembly connected to the gas inflow tube;

and an insulating micro-feeding tube sub-assembly connected to the helical flow inducing plate, each of the sub-assemblies having the fine tubules.

13. The ALD apparatus of claim 12, wherein inner diameters of the fine tubules of the electrically conductive micro-feeding tube sub-assembly and the insulating micro-feeding tube sub-assembly are in a range from 0.1 mm to 1.2 mm.

14. The ALD apparatus of claim 12, wherein each of the fine tubules of the electrically conductive micro-feeding tube sub-assembly is aligned with one of the fine tubules of the insulating micro-feeding tube sub-assembly to form a plurality of single conduits.

15. The ALD apparatus of claim 12, wherein the helical flow inducing plate is electrically and mechanically connected to the gas dispersion structure to have an electrical potential equal to that of the gas dispersion structure.

16. The ALD apparatus of claim 12,

wherein a plurality of fine holes formed in an upper portion of the helical flow inducing plate are connected to a plurality of the fine tubules of the insulating micro-feeding tube sub-assembly, and

wherein a plurality of inducing grooves are formed in a lower portion of the helical flow inducing plate for inducing a direction of the gas inflowing through the fine holes and a mixing region formed at the center of the grooves.

17. The ALD apparatus of claim 16,

wherein the inducing grooves have a shape which is curved clockwise,

wherein the mixing region is disc-shaped, and

wherein the inducing grooves are connected to the mixing region so as to contact a circumference of the mixing region.

18. The ALD apparatus of claim 16,

wherein the inducing grooves have a shape which is curved counterclockwise,

wherein the mixing region is disc-shaped, and

wherein the inducing grooves are connected to the mixing region so as to contact a circumference of the mixing region.

19. The ALD apparatus of claim 12, further comprising:

an insulating plate made of an insulating material and disposed on the gas dispersion structure;

a gas flow guiding plate disposed between the insulating plate and the reaction chamber wall;

a gas outlet for venting gas from the reaction chamber; and

a RF connection port connected to the gas dispersion structure to supply RF power,

wherein gas passages are formed between the gas dispersion structure and the insulating plate, between the insulating plate and the gas flow guiding plate, and between the gas flow guiding plate and the reaction chamber wall.

20. The ALD apparatus of claim 19, further comprising a plurality of pads symmetrically formed between the gas dispersion structure and the insulating plate, wherein a width of the gas passage between the gas dispersion structure and the insulating plate is defined by heights of the pads.

21. The ALD apparatus of claim 20, wherein the pads are machined directly on the insulating plate or the gas dispersion structure.

22. The ALD apparatus of claim 19, further comprising a plurality of pads symmetrically formed between the gas flow guiding plate and the reaction chamber wall, wherein a width of the gas passage between the gas flow guiding plate and the reaction chamber wall is defined by heights of the pads.

23. The ALD apparatus of claim 22, wherein the pads are machined directly on the gas flow guiding plate or the reaction chamber wall.

24. The ALD apparatus of claim 19, further comprising a gas manifold having gas inlets and outlets.

25. The ALD apparatus of claim 19, wherein the RF connection port passes through the reaction chamber wall and is connected to the gas dispersion structure and electrically insulated from the reaction chamber wall.

26. The ALD apparatus of claim 19, wherein inner diameters of the fine tubules of the electrically conductive micro-feeding tube sub-assembly and the insulating micro-feeding tube sub-assembly are in a range from 0.1 mm to 1.2 mm.

27. The ALD apparatus of claim 19, wherein each of the fine tubules of the electrically conductive micro-feeding tube sub-assembly is aligned with one of the fine tubules of the insulating micro-feeding tube sub-assembly to form a plurality of single conduits.

28. The ALD apparatus of claim 11, wherein the gas dispersion structure includes a volume adjusting horn with a funnel shape having an inner diameter increasing from an upper portion communicating with the helical flow inducing plate to a lower portion thereof.

29. The ALD apparatus of claim 11, wherein the gas dispersion structure is a showerhead assembly further comprising a gas dispersion perforated grid disposed at the lower portion downstream of the volume adjusting horn, the gas dispersion perforated grid having a plurality of spray holes.

30. The ALD apparatus of claim 29,

wherein the helical flow inducing plate is fixed at an upper opening of the volume adjusting horn, and

wherein the helical flow inducing plate is electrically and mechanically connected to the showerhead assembly to have an electrical potential equal to that of the showerhead assembly.

31. The ALD apparatus of claim 11, wherein the gas inflow tube and the micro-feeding tube assembly are configured to introduce gases substantially perpendicular to the helical flow inducing plate.

32. The ALD apparatus of claim 31, wherein the helical flow inducing plate comprises a plurality of grooves extending in a plane substantially parallel to the substrate support, the grooves configured to direct gases in a spiral prior to entering the gas dispersion structure in a direction substantially perpendicular to the substrate support.