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Atomic layer deposition apparatus

  • US 20060137608A1
  • Filed: 12/27/2005
  • Published: 06/29/2006
  • Est. Priority Date: 12/28/2004
  • Status: Abandoned Application
First Claim
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1. An ALD apparatus for depositing a thin film on a substrate, comprising:

  • a substrate support;

    a reaction chamber wall formed above the substrate support and defining a reaction chamber;

    a gas inflow tube connected to a source of process gas and communicating with the reaction chamber;

    a showerhead assembly which defines a reaction space together with the substrate support, the assembly including a plurality of holes connected to the gas inflow tube to supply the gas to the reaction space;

    a showerhead insulating plate made of an insulating material and disposed on the showerhead assembly;

    a gas flow guiding plate disposed between the showerhead insulating plate and the reaction chamber wall;

    a gas outlet for venting gas from the reaction chamber; and

    a RF connection port connected the showerhead assembly to supply RF power, wherein gas passages are formed between the showerhead assembly and the showerhead insulating plate, between the showerhead insulating plate and the gas flow guiding plate, and between the gas flow guiding plate and the reaction chamber wall.

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