Method for measuring information about a substrate, and a substrate for use in a lithographic apparatus

• US 20060138410A1
• Filed: 05/24/2005
• Published: 06/29/2006
• Est. Priority Date: 12/29/2004
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Hauschild, Jan, Pieters, Marco Johannes Annemarie, Lalbahadoersing, Sanjay, Van De Vin, Coen
• Granted Patent: US 7,355,675 B2
• Time in Patent Office: Days
• US Class Current: 257/48
• CPC Class Codes: G03F 7/70633 Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
• CPC Class Codes: G03F 9/7084 Position of mark on substrate, i.e. position in (x, y, z) of mark, e.g. buried or resist covered mark, mark on rearside, at the substrate edge, in the circuit area, latent image mark, marks in plural levels

Abstract

A method for measuring information provided by a substrate is disclosed. The substrate includes a feature that has been created by a lithographic apparatus. The method includes projecting a beam of light onto a marker disposed above and/or near the feature on the substrate, and detecting information provided by the marker with a sensor. A coating is disposed on the substrate so that the coating lies between the beam of light and the feature to substantially prevent the beam of light from being reflected by the feature and causing an inaccurate readout of the information provided by the marker.

Claims

1. A method for measuring information provided by a substrate, the substrate comprising a feature that has been created by a lithographic apparatus, the method comprising:

projecting a beam of light onto a marker disposed above and/or near the feature on the substrate; and

detecting information provided by said marker with a sensor;

wherein a coating is disposed on the substrate so that the coating lies between the beam of light and the feature to substantially prevent the beam of light from being reflected by the feature and causing an inaccurate readout of the information provided by the marker.

2. A method according to claim 1, wherein the coating comprises an opaque layer of material that is deposited on top of the marker.

3. A method according to claim 2, wherein the opaque layer comprises a metal.

4. A method according to claim 3, wherein the metal comprises aluminum.

5. A method according to claim 1, wherein the coating comprises a seed layer for growing crystals of an opaque metal.

6. A method according to claim 5, wherein the seed layer comprises tantalum and the metal comprises aluminum.

7. A method according to claim 1, wherein the coating is an anti-reflective coating disposed between the marker and the feature.

8. A method according to claim 7, wherein the anti-reflective coating is non-photosensitive.

9. A method according to claim 7, wherein the anti-reflective coating is anti-reflective to the wavelength of the beam of light.

10. A method according to claim 9, wherein the wavelength of the beam of light is about 533 nm.

11. A method according to claim 9, wherein the wavelength of the beam of light is about 632.8 nm.

12. A method according to claim 1, wherein the sensor is an alignment sensor.

13. A method according to claim 1, wherein the sensor is a focus sensor.

14. A method according to claim 1, wherein the sensor is an optical sensor.

15. A method according to claim 1, wherein the information provided by said marker comprises the position of said marker in the X-Y plane.

16. A method according to claim 15, wherein the position comprises an aligned position of the substrate relative to a patterning device in the lithographic apparatus.

17. A method according to claim 16, further comprising adjusting a position of the substrate on the basis of said detecting.

18. A method according to claim 1, wherein the information provided by said marker comprises focus information.

19. A method according to claim 18, wherein the focus information is used in a test that maps focus and/or leveling performance over the substrate.

20. A method according to claim 1, wherein the information provided by said marker comprises exposure dose information.

21. A method according to claim 1, wherein said detecting comprises detecting light diffracted by said marker with said sensor.

22. A method according to claim 1, wherein the method is carried out in the lithographic apparatus.

23. A method according to claim 1, wherein the method is carried out in a metrology tool.

24. A substrate for use in a lithographic apparatus, the substrate comprising:

a feature created by the lithographic apparatus;

a marker created in a layer of resist above and/or near the feature, the marker being arranged to provide information about the substrate; and

a coating for substantially preventing a beam of light used for detecting the information provided by the marker from being reflected by the feature and causing an inaccurate readout of the information provided by the marker.

25. A substrate according to claim 24, wherein the coating comprises an opaque layer deposited over the marker.

26. A substrate according to claim 25, wherein the opaque layer comprises a metal.

27. A substrate according to claim 26, wherein the metal comprises aluminum.

28. A substrate according to claim 24, wherein the coating comprises a seed layer for growing crystals of an opaque metal.

29. A substrate according to claim 28, wherein the seed layer comprises tantalum and/or the metal comprises aluminum.

30. A substrate according to claim 24, wherein the coating comprises an anti-reflective coating disposed in between the feature and the marker.

31. A substrate according to claim 30, wherein the anti-reflective coating is non-photosensitive.

32. A substrate according to claim 30, wherein the anti-reflective coating is anti-reflective to the wavelength of the beam of light.

33. A substrate according to claim 32, wherein the wavelength of the beam of light is about 533 nm.

34. A substrate according to claim 32, wherein the wavelength of the beam of light is about 632.8 nm.

35. A substrate according to claim 24, wherein the information provided by said marker comprises the position of said marker in the X-Y plane.

36. A substrate according to claim 35, wherein said position of said marker provides information about an aligned position of the substrate relative to a patterning device in the lithographic apparatus.

37. A substrate according to claim 24, wherein the information provided by said marker comprises focus information.

38. A substrate according to claim 37, wherein the focus information is used in a test that maps focus and/or leveling performance over the substrate.

39. A substrate according to claim 24, wherein the information provided by said marker comprises exposure dose information.

40. A substrate according to claim 24, wherein the marker comprises a plurality of lines and a plurality of trenches, the plurality of line and trenches being arranged in a repetitive order in the marker.

41. A substrate according to claim 24, wherein the marker consists of an arrangement of single lines.

42. A substrate according to claim 24, wherein the beam of light is provided in the lithographic apparatus.

43. A substrate according to claim 24, wherein the beam of light is provided in a metrology tool.

44. A lithographic apparatus in combination with a substrate for use in the lithographic apparatus, the lithographic apparatus comprising:

an illumination system for conditioning a beam of radiation;

a support for supporting a patterning device, the patterning device serving to impart the beam of radiation with a pattern in its cross-section;

a substrate table for supporting the substrate;

a projection system for projecting the patterned beam of radiation onto a target portion of the substrate; and

a sensor for measuring information about the substrate; and

the substrate comprising;

a feature created by patterning the beam of radiation with the patterning device and projecting the patterned beam of radiation with the projection system onto the target portion of the substrate;

a marker created in a layer of resist above and/or near the feature, the marker being arranged to provide the information about the substrate; and

a coating for substantially preventing a beam of light from the sensor in the lithographic apparatus from being reflected by the feature and causing an inaccurate readout of the information provided by the marker.

45. A combination according to claim 44, wherein the coating comprises an opaque layer deposited over the marker.

46. A combination according to claim 45, wherein the opaque layer comprises a metal.

47. A combination according to claim 46, wherein the metal comprises aluminum.

48. A combination according to claim 44, wherein the coating comprises a seed layer for growing crystals of an opaque metal.

49. A combination according to claim 48, wherein the seed layer comprises tantalum and/or the metal comprises aluminum.

50. A combination according to claim 44, wherein the coating comprises an anti-reflective coating disposed in between the feature and the marker.

51. A combination according to claim 50, wherein the anti-reflective coating is non-photosensitive.

52. A combination according to claim 50, wherein the anti-reflective coating is anti-reflective to the wavelength of the beam of light provided by the sensor.

53. A combination according to claim 52, wherein the wavelength of the beam of light is about 533 nm.

54. A combination according to claim 52, wherein the wavelength of the beam of light is about 632.8 nm.

55. A combination according to claim 44, wherein the lithographic apparatus further comprises a level sensor for mapping the topography of the substrate.

56. A combination according to claim 55, wherein the anti-reflective coating is transparent to the wavelength of a beam of light provided by the level sensor.

57. A combination according to claim 56, wherein the wavelength is between about 900 nm and about 1100 nm.

58. A combination according to claim 44, wherein the sensor is an alignment sensor.

59. A combination according to claim 44, wherein the sensor is a focus sensor.

60. A combination according to claim 44, wherein the sensor is an optical sensor.

61. A combination according to claim 44, wherein the information provided by said marker comprises the position of said marker in the X-Y plane.

62. A combination according to claim 61, wherein said position of said marker provides information about an aligned position of the substrate relative to the patterning device in the lithographic apparatus.

63. A combination according to claim 44, wherein the information provided by said marker comprises focus information.

64. A combination according to claim 63 wherein the focus information is used in a test that maps focus and/or leveling performance over the substrate.

65. A combination according to claim 44, wherein the information provided by said marker comprises dose information.

66. A combination according to claim 44, wherein the marker comprises a plurality of lines and a plurality of trenches, the plurality of line and trenches being arranged in a repetitive order in the marker.

67. A combination according to claim 44, wherein the marker consists of an arrangement of single lines.