Semiconductor light emitting device and method of manufacturing the same

• US 20060138432A1
• Filed: 12/28/2005
• Published: 06/29/2006
• Est. Priority Date: 12/28/2004
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electro-Mechanics Co., Ltd. (Samsung Group)
• Inventors: Yoon, Suk-ho, Sone, Cheol-soo
• Granted Patent: US 7,981,775 B2
• Time in Patent Office: Days
• US Class Current: 257/79
• CPC Class Codes: H01L 21/0217 the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz H01L21/02126 and H01L21/0214 take precedence
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/02458 Nitrides
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02639 Preparation of substrate for selective deposition
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3185 of siliconnitrides
• CPC Class Codes: H01L 33/005 Processes
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

Provided is a nitride semiconductor light emitting diode and a method of manufacturing the same. The method includes sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate, in-situ depositing a mask layer on a region of the surface of the second semiconductor layer, and selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.

Claims

1. A method of manufacturing a semiconductor light emitting diode, comprising:

sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate;

in-situ depositing a mask layer on a region of the surface of the second semiconductor layer; and

selectively growing a third semiconductor layer formed in a textured structure on the second semiconductor layer by depositing a semiconductor material on the second semiconductor layer and the mask layer.

2. The method of claim 1, wherein the in-situ depositing of a mask layer on a region of the surface of the second semiconductor layer comprises forming the mask layer by adding a Si source and an N source to the second semiconductor layer.

3. The method of claim 2, wherein the Si source comprises at least one of silicon source such as triethylsilane(TESi), tributhy silane(TBSi), ditertiarybuthysilane(DTBSI) or silicon hydride sources such as silane(SiH₄), disilane(Si₂H₆).

4. The method of claim 2, wherein the N source is NH₃.

5. The method of claim 1, wherein the first semiconductor layer is formed of an n-type semiconductor material and the second semiconductor layer is formed of a p-type semiconductor material.

6. The method of claim 1, wherein the operations in claim 1 are performed by MOCVD or MBE.

7. A semiconductor light emitting diode having a first semiconductor layer, an active layer, and a second semiconductor layer, comprising:

a mask layer formed on the second semiconductor layer; and

a third semiconductor layer formed in a textured structure on a surface of the second semiconductor layer on which the mask layer is not formed.

8. The semiconductor light emitting diode of claim 7, wherein the mask layer is formed of a material that comprises Si_xN_y.