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Semiconductor device and method for fabricating the same

  • US 20060138562A1
  • Filed: 11/29/2005
  • Published: 06/29/2006
  • Est. Priority Date: 11/30/2004
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a gate electrode formed on a silicon substrate;

    source/drain regions formed at both sides of the gate electrode in the silicon substrate; and

    a silicide layer formed on the source/drain regions, wherein the silicide layer includes a first silicide layer mainly made of a metal silicide having a formation enthalpy lower than that of NiSi and a second silicide layer formed on the first silicide layer and made of Ni silicide.

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