Semiconductor device and manufacturing method thereof

• US 20060138587A1
• Filed: 12/29/2005
• Published: 06/29/2006
• Est. Priority Date: 12/29/2004
• Status: Abandoned Application

• Current Assignee: DONGBU ELECTRONICS CO., LTD. (DB HiTek Co., Ltd.)
• Original Assignee: Dongbuanam Semiconductor, Inc. (DB HiTek Co., Ltd.)
• Inventors: Choi, Chee-Hong
• Application Number:
  US11/319,535
• Publication Number:
  US 20060138587A1
• Time in Patent Office: Days
• US Class Current: 257/528
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 28/10 Inductors
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An semiconductor device and a manufacturing method minimizes the inductor area in a high frequency device by forming an inductor with a vertical spiral geometry. Accordingly, the device can be highly integrated. In addition, the inductor area overlapped with various devices on a substrate can be minimized so as to prevent deterioration of the electrical characteristics of the inductor.

Claims

1. A semiconductor device, comprising:

a lower metal line formed on a substrate;

a first column portion formed at a first location on the lower metal line, the first column portion comprising at least one first metal plug and at least one first intermediate metal block, wherein a lowest one of the at least one first metal plug and the at least one first intermediate metal block is connected to the lower metal line;

a second column portion formed at a second location on the lower metal line, the second column portion comprising at least one second metal plug and at least one second intermediate metal block, wherein a lowest one of the at least one second metal plug and the at least one second intermediate metal block is connected with the lower metal line;

a third column portion formed at a third location between the first and second locations, the third column portion comprising at least one third metal plug and at least one third intermediate metal block, wherein the third column portion is separated from the lower metal line; and

an upper metal block connecting the third column portion with one of the first and second column portions at a top position thereof.

2. The semiconductor device of claim 1, wherein the lower metal line, the first, second, and third intermediate metal blocks, and the upper metal block comprise copper.

3. The semiconductor device of claim 1, wherein the first, second, and third metal plugs comprise copper.

4. The semiconductor device of claim 1, wherein the lower metal line, the first, second, and third intermediate metal blocks, and the upper metal blocks have the same width as the metal plugs.

5. The semiconductor device of claim 1, wherein the lower metal line is formed in an isolation region on a substrate.

6. A manufacturing method of a semiconductor device, comprising:

forming a first insulation layer on a substrate;

forming a first trench on the substrate by selectively etching the first insulation layer;

forming a lower metal line by filling the first trench with a conductive material;

forming a second insulation layer on the first insulation layer;

selectively etching the second insulation layer at first and second locations forming a plurality of second trenches and a plurality of first contact holes;

forming a plurality of intermediate metal blocks by filling the first contact holes and the second trenches with a conductive material;

forming a third insulation layer on the second insulation layer and the intermediate metal blocks;

selectively etching the third insulation layer so as to form a plurality of second contact holes and a common trench, the common trench interconnecting an adjacent pair of the second contact holes; and

forming an upper metal block by filling the plurality of second contact holes and the common trench with a conductive material.

7. The manufacturing method of claim 6, further comprising, after forming intermediate metal blocks:

forming a fourth insulation layer on the second insulation layer;

forming a plurality of third contact holes by selectively etching the fourth insulation layer;

forming a plurality of third trenches in the fourth insulation layer; and

forming metal blocks by filling the third contact holes and the third trenches with a conductive material.

8. The manufacturing method of claim 6, wherein:

forming the lower metal line, comprises forming the lower metal line by depositing a copper metal layer on the first insulation layer and filling the first trench, and planarizing the copper metal layer;

forming the intermediate metal blocks comprises forming the intermediate metal blocks by depositing a copper metal layer on the second insulation layer and filling the plurality of first contact holes and the plurality of second trenches, and planarizing the copper metal layer;

forming the upper metal blocks comprises forming the upper metal blocks by depositing a copper metal layer on the third insulation layer and filling the plurality of second contact holes and the common trench, and planarizing the copper metal layer.

9. The manufacturing method of claim 6, further comprising:

before forming the lower metal line, forming a barrier metal on the first insulation layer filling the first trench and selectively etching barrier metal formed directly on a bottom surface of the first trench;

before forming the intermediate metal blocks, forming a barrier metal on the second insulation layer, filling the plurality of first contact holes and the plurality of second trenches, selectively etching barrier metal formed directly on a bottom surface of the plurality of first contact holes and the plurality of second trenches; and

before forming the upper metal block, forming a barrier metal on the third insulation layer, filling the plurality of second contact holes and the common trench, and selectively etching barrier metal formed directly on a bottom surface of the plurality of second contact holes and the common trench.

10. A semiconductor device comprising a substrate and an inductor formed above the substrate, wherein:

the inductor comprises a plurality of metal plugs and metal blocks; and

the inductor is formed to have a vertical spiral profile.

11. The semiconductor device of claim 10, wherein the inductor comprises a lower conductive portion, first, second, and third conductive column portions, and an upper conductive portion, and

wherein the first and second conductive column portions are connected with the lower conductive portion, and the third conductive column portion is connected with one of the first and second conductive portions by the upper conductive portion at a vertical position higher than the lower conductive portion.

12. The semiconductor device of claim 11, wherein the first, second, and third conductive column portions, the lower conductive portion, and the upper conductive portion are on a same plane with respect to at least one vertical cross-sectional plane.

13. The semiconductor device of claim 11, wherein at least one of the first, second, and third conductive column portions comprises at least one metal plug and at least one horizontal metal block.

14. The semiconductor device of claim 13, wherein the at least one metal plug and the at least one horizontal metal block comprises a plurality of metal plugs and a plurality of horizontal metal blocks that are alternately arranged.