Semiconductor device

• US 20060138633A1
• Filed: 12/27/2005
• Published: 06/29/2006
• Est. Priority Date: 12/28/2004
• Status: Abandoned Application

• Current Assignee: Nissan Motor Co., Ltd.
• Original Assignee: Nissan Motor Co., Ltd.
• Inventors: Okada, Yasuhiro, Shibuya, Akihiro, Furukawa, Motoyuki, Naruse, Mikio, Ueno, Daigo
• Application Number:
  US11/317,078
• Publication Number:
  US 20060138633A1
• Time in Patent Office: Days
• US Class Current: 257/688
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/40 of an individual strap connector
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 24/72 Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
• CPC Class Codes: H01L 25/072 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 Boron [B]
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01013 Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 Phosphorus [P]
• CPC Class Codes: H01L 2924/01023 Vanadium [V]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01042 Molybdenum [Mo]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/01082 Lead [Pb]
• CPC Class Codes: H01L 2924/1305 Bipolar Junction Transistor [BJT]
• CPC Class Codes: H01L 2924/13055 Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/30107 : Inductance
• CPC Class Codes: H01L 2924/351 : Thermal stress

Abstract

A semiconductor device includes first and second semiconductor chips formed with electrodes on front and reverse sides, a first bus bar on which the first semiconductor chip is mounted so as the reverse side electrode to be connected thereto, a second bus bar, arranged parallel with the first bus bar, on which the second semiconductor chip is mounted so as the reverse side electrode to be connected thereto, a third bus bar that is press-connected to the front side electrode of the first semiconductor chip, a fourth bus bar that is press-connected to the front side electrode of the second semiconductor chip, and a connecting section that electrically connects the first bus bar and the fourth bus bar.

Claims

1. A semiconductor device comprising:

a first semiconductor chip formed with a front side electrode and a reverse side electrode;

a second semiconductor chip formed with a front side electrode and a reverse side electrode;

a first bus bar on which the first semiconductor chip is mounted so as the reverse side electrode of the first semiconductor chip to be connected thereto;

a second bus bar, arranged horizontally with respect to the first bus bar, on which the second semiconductor chip is mounted so as the reverse side electrode of the second semiconductor chip to be connected thereto;

a third bus bar that is press-connected to the front side electrode of the first semiconductor chip;

a fourth bus bar that is press-connected to the front side electrode of the second semiconductor chip; and

a connecting section that electrically connects the first bus bar and the fourth bus bar.

2. A semiconductor device according to claim 1, wherein:

the first bus bar, the fourth bus bar and the connecting section are formed integrally by bending a single conducting plate.

3. A semiconductor device according to claim 2, wherein:

the first bus bar and the fourth bus bar are linked so as to be capable of relative displacement in a vertical direction at a time of pressing.

4. A semiconductor device according to claim 3, further comprising:

a deforming section provided at the connecting section, that deforms at the time of pressing so as to enable the relative displacement of the first bus bar and the fourth bus bar in the vertical direction.

5. A semiconductor device according to claim 1, wherein:

a part of the first bus bar is press-connected to the fourth bus bar.

10. A semiconductor device according to claim 1, further comprising:

terminals, provided at the second bus bar and the third bus bar so as to be arranged next to each other, that extend to an outside of the semiconductor device.

11. A semiconductor device according to claim 10, wherein:

the terminals of the second bus bar and the third bus bar extend in a same direction.

12. A semiconductor device according to claim 1, further comprising:

third conductive members provided between the first semiconductor chip and the third bus bar and between the second semiconductor chip and the fourth bas bar to touch the first semiconductor chip and the second semiconductor chip respectively; and

fourth conductive members, sandwiched between the first bus bar and the third conductive member and between the second bus bar and the third conductive member respectively, that have a Young'"'"'s modulus lower than a Young'"'"'s modulus of the third conductive members.

13. A semiconductor device according to claim 12, wherein:

each of the fourth conductive members is set in such a manner that an area of a first contact surface that is in contact with one of the third bus bar and the fourth bas bar is smaller than an area of a second contact surface that is in contact with one of the third conductive members.

14. A semiconductor device according to claim 13, wherein:

the area of the first contact surface is set to be smaller than the area of the second contact surface by subjecting an edge of the first contact surface to one of curved-surface processing and chamfering.

16. A semiconductor device according to claim 1, further comprising:

an auxiliary cooling member, arranged on the third bus bar and the fourth bus bar, that comprises an extending section for heat dissipation at a side surface.

17. A semiconductor device according to claim 1, further comprising:

a first casing that is formed with the first bus bar, the fourth bus bar, and the connecting section, and that houses the first semiconductor chip; and

a second casing that is formed with the second bus bar, and that houses the second semiconductor chip.

6. A semiconductor device comprising:

a first semiconductor chip formed with a front side electrode and a reverse side electrode;

a second semiconductor chip formed with a front side electrode and a reverse side electrode;

a first bus bar on which the first semiconductor chip is mounted so as the reverse side electrode of the first semiconductor chip to be connected thereto, and on which the second semiconductor chip is mounted so as the front side electrode of the second semiconductor chip to be connected thereto;

a second bus bar that is press-connected to the front side electrode of the first semiconductor chip; and

a third bus bar that is press-connected to the reverse side electrode of the second semiconductor chip.

7. A semiconductor device comprising:

a first semiconductor chip formed with a front side electrode and a reverse side electrode;

a second semiconductor chip formed with a front side electrode and a reverse side electrode;

a first bus bar on which the first semiconductor chip is mounted so as the reverse side electrode of the first semiconductor chip to be connected thereto;

a second bus bar, arranged horizontally with respect to the first bus bar, on which the second semiconductor chip is mounted so as the reverse side electrode of the second semiconductor chip to be connected thereto;

a first conductive member that connects with the front side electrode of the first semiconductor chip and comprises an extending section extending beyond the first semiconductor chip;

a second conductive member that connects with the front side electrode of the second semiconductor chip and comprises an extending section extending to above the first bus bar;

a third bus bar, arranged at a front surface side of the first semiconductor chip, with a part press-connected to the extending section of the first conductive member; and

a fourth bus bar, arranged at a front surface side of the second semiconductor chip, with a part connected with the extending section of the second conductive member and press-connected to the first bus bar.

8. A semiconductor device according to claim 7, wherein:

either press-connecting surfaces of the extending sections or connecting surfaces of the first, third and fourth bus bars press-connected to the extending sections is given an irregular shape.

9. A semiconductor device according to claim 7, further comprising:

deforming sections, provided at the first conductive member and the second conductive member, that deform at a time of pressing the third bus bar and the fourth bus bar to the extending sections so as to enable vertical displacement of the extending sections.

18. A semiconductor device according to claim 7, further comprising:

a first unit that comprises the first semiconductor chip, the second semiconductor chip, the first bus bar, the second bus bar, the first conductive member, and the second conductive member;

a second unit that comprises the third bus bar and the fourth bus bar; and

a third unit that comprises a projection section to press the third bus bar and the fourth bus bar, wherein;

the second unit is laid on top of the first unit, and the third unit is laid on top of the second unit.

15. A semiconductor device comprising:

first, second, third and fourth semiconductor chips formed with electrodes on front and reverse sides;

a first bus bar on which the first and second semiconductor chips are mounted so as the reverse side electrodes to be connected thereto;

a second bus bar, arranged horizontally with respect to the first bus bar, on which the third and fourth semiconductor chips are mounted so as the reverse side electrodes to be connected thereto;

a third bus bar that is press-connected to the front side electrodes of the first and second semiconductor chips;

a fourth bus bar that is press-connected to the front side electrodes of the third and fourth semiconductor chips;

a connecting section that electrically connects the first bus bar and the fourth bus bar;

a first pressing member arranged on the third bus bar so as to press the third bus bar towards the first semiconductor chip;

a second pressing member arranged on the third bus bar so as to press the third bus bar towards the second semiconductor chip;

a third pressing member arranged on the fourth bus bar so as to press the fourth bus bar towards the third semiconductor chip; and

a fourth pressing member arranged on the fourth bus bar so as to press the fourth bus bar towards the fourth semiconductor chip.