Liquid crystal display device and fabricating method thereof
First Claim
1. A liquid crystal display device, comprising:
- a gate line on a substrate;
a data line crossing the gate line with a gate insulating film therebetween, wherein the data and gate lines define a pixel area;
a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode opposed to the source electrode and a semiconductor pattern defining a channel between the source electrode and the drain electrode;
a common line on the substrate and substantially parallel to the gate line;
a common electrode extended from the common line into the pixel area; and
a pixel electrode extended from the drain electrode into the pixel area to form a horizontal electric field with the common electrode, wherein the gate line and the common line have a first conductive layer group having at least double conductive layers, and the common electrode is formed by an extension of at least one transparent conductive layer of the common line; and
the gate line, the source electrode and the drain electrode have a second conductive layer group having at least double conductive layers, and the pixel electrode is formed by an extension of at least one transparent conductive layer of the drain electrode.
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Accused Products
Abstract
A LCD device includes a gate line on a substrate and a data line crossing the gate line to define a pixel area; a thin film transistor source and drain electrodes; a common line parallel to the gate line; a common electrode extended from the common line and a pixel electrode extending from the drain electrode wherein the gate line and the common line have a first conductive layer group having at least double conductive layers, and the common electrode is formed by an extension of at least one transparent conductive layer of the common line; and the gate line, the source electrode and the drain electrode have a second conductive layer group having at least double conductive layers, and the pixel electrode is formed by an extension of at least one transparent conductive layer of the drain electrode.
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Citations
45 Claims
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1. A liquid crystal display device, comprising:
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a gate line on a substrate;
a data line crossing the gate line with a gate insulating film therebetween, wherein the data and gate lines define a pixel area;
a thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode opposed to the source electrode and a semiconductor pattern defining a channel between the source electrode and the drain electrode;
a common line on the substrate and substantially parallel to the gate line;
a common electrode extended from the common line into the pixel area; and
a pixel electrode extended from the drain electrode into the pixel area to form a horizontal electric field with the common electrode, wherein the gate line and the common line have a first conductive layer group having at least double conductive layers, and the common electrode is formed by an extension of at least one transparent conductive layer of the common line; and
the gate line, the source electrode and the drain electrode have a second conductive layer group having at least double conductive layers, and the pixel electrode is formed by an extension of at least one transparent conductive layer of the drain electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A method of fabricating a liquid crystal display device, comprising:
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a first mask process of forming a first mask pattern group including a gate line, a gate electrode connected to the gate line and a common line substantially parallel to the gate line having a first conductive layer group structure including at least double conductive layers, and a common electrode extended from at least one of the conductive layers of the common line on a substrate;
a second mask process of forming a gate insulating film on the first mask pattern group and a semiconductor pattern thereon; and
a third mask process of forming a third mask pattern group including a data line, a source electrode connected to the data line and a drain electrode opposite the source electrode having a second conductive layer group structure including at least double conductive layers, and a pixel electrode extended from at least one of the conductive layers of the drain electrode on the gate insulating film with the semiconductor pattern. - View Dependent Claims (23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45)
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Specification