Plating apparatus and plating method

• US 20060141157A1
• Filed: 05/25/2004
• Published: 06/29/2006
• Est. Priority Date: 05/27/2003
• Status: Abandoned Application

• Current Assignee: Ebara Corporation
• Original Assignee: Ebara Corporation
• Inventors: Saito, Nobutoshi, Takemura, Takashi, Yoshioka, Junichiro, Kuriyama, Fumio, Sekimoto, Masahiko, Minami, Yoshio, Endo, Yasuhiko, Horie, Kuniaki, Strausser, Stephen
• Application Number:
  US10/544,623
• Publication Number:
  US 20060141157A1
• Time in Patent Office: Days
• US Class Current: 427/282
• CPC Class Codes: C25D 17/001 Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
• CPC Class Codes: C25D 5/022 using masking means
• CPC Class Codes: C25D 7/123 Semiconductors first coated with a seed layer or a conductive layer
• CPC Class Codes: H01L 21/2885 using an external electrical current, i.e. electro-deposition
• CPC Class Codes: H01L 21/67173 in-line arrangement
• CPC Class Codes: H01L 21/6723 comprising at least one plating chamber electroless plating apparatuses C23C, electroplating apparatuses C25D
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05573 Single external layer
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/1147 using a lift-off mask
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 24/11 Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01006 Carbon [C]
• CPC Class Codes: H01L 2924/01029 Copper [Cu]
• CPC Class Codes: H01L 2924/01033 Arsenic [As]
• CPC Class Codes: H01L 2924/01046 Palladium [Pd]
• CPC Class Codes: H01L 2924/01047 Silver [Ag]
• CPC Class Codes: H01L 2924/01074 Tungsten [W]
• CPC Class Codes: H01L 2924/01078 Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/01322 : Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
• CPC Class Codes: H01L 2924/014 : Solder alloys

Abstract

A plating apparatus has an ashing unit (300) configured to perform an ashing process on a resist (502) applied on a surface of a seed layer (500) formed on a substrate (W), and a pre-wetting section (26) configured to provide hydrophilicity to a surface of the substrate after the ashing process. The plating apparatus includes a pre-soaking section (28) configured to bring the surface of the substrate into contact with a treatment solution to clean or activate a surface of the seed layer formed on the substrate. The plating apparatus also includes a plating unit (34) configured to bring the surface of the substrate into a plating solution in a plating tank while the resist is used as a mask so as to form a plated film (504) on the surface of the seed layer formed on the substrate.

Claims

1. A plating apparatus comprising:

an ashing unit configured to perform an ashing process on a resist applied on a surface of a seed layer formed on a substrate;

a pre-wetting section configured to provide hydrophilicity to a surface of the substrate after the ashing process;

a pre-soaking section configured to bring the surface of the substrate into contact with a treatment solution to clean or activate a surface of the seed layer formed on the substrate; and

a plating unit configured to bring the surface of the substrate into a plating solution in a plating tank while the resist is used as a mask so as to form a plated film on the surface of the seed layer formed on the substrate.

2. The plating apparatus as recited in claim 1, wherein said ashing unit is configured to apply at least one of plasma, light, and an electromagnetic wave to the resist to perform the ashing process on the resist.

3. The plating apparatus as recited in claim 1, wherein said pre-wetting section comprises at least one of a pre-wetting tank configured to immerse a substrate in pure water and a pre-wetting device configured to eject pure water through a spray to a surface of the substrate.

4. The plating apparatus as recited in claim 3, wherein said pre-wetting section is substantially under vacuum or under a pressure lower than an atmospheric pressure.

5. The plating apparatus as recited in claim 3, wherein said pre-wetting section comprises a deaeration device for deaerating the pure water.

6. The plating apparatus as recited in claim 1, wherein said pre-wetting section comprises a plurality of pre-wetting portions having different functions.

7. The plating apparatus as recited in claim 1, wherein said pre-soaking section comprises a pre-soaking tank to hold the treatment solution including at least one of ozone water, an acid solution, an alkali solution, an acid degreasing agent, a solution containing a developer, a solution containing a resist stripping solution, and reduced water of an electrolytic solution.

8. The plating apparatus as recited in claim 1, wherein said pre-soaking section comprises a pre-soaking tank to hold the treatment solution including an acid solution or an acid degreasing agent so as to perform an electrolytic process on the substrate in the treatment solution in a state such that the substrate serves as a cathode.

9. The plating apparatus as recited in claim 1, wherein said plating unit comprises:

an anode disposed in the plating solution; and

an anode weight measuring device operable to measure weight of said anode.

10. The plating apparatus as recited in claim 9, wherein said anode weight measuring device comprises a load cell.

11. The plating apparatus as recited in claim 1, wherein said plating tank comprises:

an anode disposed in the plating solution;

a dummy anode provided in said plating tank; and

a single power supply configured to apply a voltage selectively to said anode for an actual plating process and to said dummy anode for a dummy plating process.

12. The plating apparatus as recited in claim 11, wherein said single power supply is configured to automatically switch application of the voltage so as to perform the actual plating process after completion of the dummy plating process.

13. The plating apparatus as recited in claim 1, further comprising a plating solution management unit configured to manage components of the plating solution to be supplied to said plating unit.

14. The plating apparatus as recited in claim 13, wherein said plating solution management unit is configured to analyze and/or estimate components of the plating solution and to add an insufficient component to the plating solution through a feedback control and/or a feedforward control.

15. The plating apparatus as recited in claim 1, further comprising a communication device configured to communicate information through a communication network using a computer.

16. The plating apparatus as recited in claim 1, further comprising a resist stripping unit configured to strip and remove the resist used as a mask from the surface of the seed layer formed on the substrate.

17. The plating apparatus as recited in claim 1, further comprising a seed layer removal unit configured to remove an unnecessary portion of a seed layer formed on the substrate.

18. The plating apparatus as recited in claim 1, further comprising an annealing unit configured to anneal the plated film formed on the surface of the substrate.

19. The plating apparatus as recited in claim 1, further comprising a reflowing unit configured to reflow the plated film formed on the surface of the substrate.

20. The plating apparatus as recited in claim 1, further comprising a neutralization unit configured to perform a neutralization treatment on the surface of the substrate.

21. The plating apparatus as recited in claim 1, further comprising a visual inspection unit configured to inspect an appearance of the plated film formed on the surface of the substrate.

22. The plating apparatus as recited in claim 21, wherein said visual inspection unit is configured to inspect the appearance of the plated film in a contact or non-contact manner.

23. The plating apparatus as recited in claim 1, further comprising a film thickness measurement unit configured to measure film thickness of the plated film formed on the surface of the substrate.

24. The plating apparatus as recited in claim 23, wherein said film thickness measurement unit is configured to measure the film thickness of the plated film in a contact or non-contact manner.

25. The plating apparatus as recited in claim 1, further comprising a plating area measurement unit configured to measure an actual area in which the plated film is to be formed on the surface of the substrate.

26. The plating apparatus as recited in claim 25, wherein said plating area measurement unit is configured to supply a current to the substrate to measure the actual area.

27. The plating apparatus as recited in claim 25, wherein said plating area measurement unit is configured to optically scan the surface of the substrate to measure the actual area.

28. The plating apparatus as recited in claim 1, further comprising a polishing unit configured to polish a surface of the plated film to adjust film thickness of the plated film.

29. The plating apparatus as recited in claim 28, wherein said polishing unit is configured to perform chemical mechanical polishing or mechanical polishing to polish the surface of the plated film.

30. The plating apparatus as recited in claim 1, further comprising a chemical liquid adjustment unit configured to remove metal impurities or organic impurities mixed in the plating solution or generated decomposition products.

31. The plating apparatus as recited in claim 30, wherein said chemical liquid adjustment unit includes at least one of an electrolytic process section, an ion exchange section, an activated carbon process section, and a coagulation and settlement section.

32. The plating apparatus as recited in claim 1, further comprising a chemical liquid supply and recovery unit configured to supply a chemical liquid to said plating tank and recover the chemical liquid from said plating tank.

33. The plating apparatus as recited in claim 32, wherein said chemical liquid supply and recovery unit includes a chemical liquid container attached in a replaceable manner, said chemical liquid supply and recovery unit supplying the chemical liquid from said chemical liquid container to said plating tank and recovering the chemical liquid from said plating tank to said chemical liquid container.

34. The plating apparatus as recited in claim 1, further comprising a plating solution regeneration unit configured to remove an organic substance contained in the plating solution to regenerate the plating solution.

35. The plating apparatus as recited in claim 34, wherein said plating solution regeneration unit is configured to remove the organic substance through an activated carbon filter.

36. The plating apparatus as recited in claim 1, further comprising an exhaust gas treatment unit configured to remove a harmful component from gas or mist produced in said plating apparatus and to discharge harmless gas to an exterior of said plating apparatus through a duct.

37. The plating apparatus as recited in claim 36, wherein said exhaust gas treatment unit is configured to remove the harmful component through a wet process with an absorption liquid, a dry process with an absorbent, or a condensation liquefaction process by cooling.

38. The plating apparatus as recited in claim 36, wherein said plating tank has a first chamber holding an acid plating solution, a second chamber holding a cyanic plating solution, and a partition to separate said first chamber and said second chamber,

wherein said first chamber includes an exhaust duct to discharge an acid gas produced from the acid plating solution in said first chamber,

wherein said second chamber includes an exhaust duct to discharge a cyanic gas produced from the cyanic plating solution in said second chamber.

39. The plating apparatus as recited in claim 38, wherein the cyanic plating solution comprises a gold plating solution or a silver plating solution.

40. The plating apparatus as recited in claim 1, further comprising a waste water regeneration unit configured to regenerate waste water, which has been used in and discharged from said plating unit, to reuse at least a portion of regenerated waste water for said plating unit while discharging the rest of the waste water to an exterior of said plating apparatus.

41. The plating apparatus as recited in claim 40, wherein said waste water regeneration unit is configured to regenerate the waste water by at least one of microfiltration, ultraviolet irradiation, ion exchange, ultrafiltration, and reverse osmosis.

42. A plating apparatus comprising:

a loading/unloading section configured to load and unload a cassette housing substrates;

a sensor provided in said loading/unloading section for detecting sizes of the substrates received in the cassette;

a plurality of tools corresponding to sizes of substrates to be plated;

a tool stocker to store said plurality of tools;

a plating section configured to perform at least a plating process;

a controller configured to select a tool corresponding to a size detected by said sensor from said plurality of tools; and

a transfer device configured to hold and transfer said tool selected by said controller to said plating section.

43. A plating apparatus comprising:

a plurality of plating tanks each having a plating solution and an anode therein; and

a single power supply configured to selectively apply a voltage between a substrate and anodes in said plurality of plating tanks so as to perform sequential plating processes.

44. The plating apparatus as recited in claim 43, wherein said plurality of plating tanks contain different kinds of metals.

45. The plating apparatus as recited in claim 43, further comprising:

a sensor for detecting when a substrate is immersed in the plating solutions of said plurality of plating tanks; and

a switch operable to switch said single power supply based on a signal from said sensor.

46. A plating method comprising:

applying a resist on a surface of a seed layer formed on a substrate;

ashing the resist;

providing hydrophilicity to a surface of the substrate after said ashing process so as to perform a hydrophilic process on the surface of the substrate;

cleaning or activating the surface of the substrate after said hydrophilic process; and

bringing the surface of the substrate into a plating solution while the resist is used as a mask so as to perform a plating process to form a plated film on the surface of the substrate.

47. The plating method as recited in claim 46, wherein said hydrophilic process comprises continuously performing two or more types of hydrophilic processes.

48. The plating method as recited in claim 46, further comprising stripping and removing the resist from the surface of the seed layer after said plating process.

49. The plating method as recited in claim 46, further comprising removing an unnecessary portion of the seed layer formed on the surface of the substrate.

50. The plating method as recited in claim 46, further comprising annealing the plated film formed on the surface of the substrate.

51. The plating method as recited in claim 46, further comprising reflowing the plated film formed on the surface of the substrate.

52. The plating method as recited in claim 46, further comprising performing a neutralization treatment on the surface of the substrate after said plating process.

53. The plating method as recited in claim 46, further comprising inspecting an appearance of the plated film formed on the surface of the substrate.

54. The plating method as recited in claim 46, further comprising measuring film thickness of the plated film formed on the surface of the substrate.

55. The plating method as recited in claim 46, further comprising measuring an actual area in which the plated film is to be formed on the surface of the substrate.

56. The plating method as recited in claim 46, further comprising polishing the plated film formed on the surface of the substrate to adjust film thickness of the plated film.

57. A plating apparatus comprising:

a plating unit configured to form a plated film on a surface of a substrate while a resist is applied as a mask on a surface of a seed layer formed on a substrate;

a resist stripping unit configured to strip and remove the resist from the surface of the seed layer; and

an etching unit configured to remove an unnecessary portion of the seed layer formed on the surface of the substrate,

wherein said plating unit, said resist stripping unit, and said etching unit are incorporated integrally with each other.

58. The plating apparatus as recited in claim 57, further comprising:

a cleaning unit configured to clean the substrate; and

a pre-treatment unit configured to perform a pre-treatment process before plating.

59. The plating apparatus as recited in claim 57, further comprising a reflowing unit configured to reflow the plated film formed on the surface of the substrate.

60. The plating apparatus as recited in claim 57, wherein the plated film forms a bump.