Forming a nanotube switch and structures formed thereby

• US 20060141678A1
• Filed: 12/29/2004
• Published: 06/29/2006
• Est. Priority Date: 12/29/2004
• Status: Abandoned Application

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Jewell-Larsen, Nels, Montgomery, Stephen, Aldridge, Tomm
• Application Number:
  US11/027,808
• Publication Number:
  US 20060141678A1
• Time in Patent Office: Days
• US Class Current: 438/129
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: B82Y 30/00 Nanotechnology for materials or surface science, e.g. nanocomposites
• CPC Class Codes: H10K 10/00 Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers integrated devices or assemblies of multiple devices H10K19/00
• CPC Class Codes: H10K 85/221 Carbon nanotubes
• CPC Class Codes: H10K 85/225 comprising substituents

Abstract

Methods of forming a microelectronic structure are described. Embodiments of those methods include providing a substrate comprising a power pad, and attaching a nanotube comprising at least one side chain to the power pad.

Claims

1. A method of forming a structure comprising:

providing a substrate comprising a power pad; and

attaching a nanotube comprising at least one side chain to the power pad.

2. The method of claim 1 further comprising wherein the nanotube comprises a backbone structure, wherein the least one side chain is attached to the backbone structure.

3. The method of claim 2 wherein the backbone structure may comprise PPE.

4. The method of claim 1 further comprising wherein a length of the backbone structure is substantially parallel to a length of the nanotube.

5. The method of claim 1 further comprising wherein the at least one side chain comprises a side chain charge state.

6. The method of claim 1 further comprising wherein the at least one side chain comprises an electronegative side chain.

7. The method of claim 1 further comprising wherein the substrate comprises a first switch pad and a first current pad disposed on a first side of the substrate.

8. The method of claim 7 further comprising wherein the substrate comprises a second switch pad and a second current pad disposed on a second side of the substrate.

9. The method of claim 8 further comprising wherein the second switch pad comprises a second charge state of substantially opposite sign as the side chain charge state, and wherein the first switch pad comprises a first charge state that is substantially the same sign as the side chain charge state.

10. The method of claim 9 further comprising wherein the nanotube bends to make contact with the second switch pad and the second current pad.

11. The method of claim 10 wherein the nanotube bends to make contact with the second switch pad and the second current pad comprises wherein the at least one side chain of the at least one nanotube is electrically attracted to and makes contact with the second switch pad and the second current pad.

12. The method of claim 10 further comprising wherein a conductive path is made between the power pad and the second switch pad and the second current pad.

13. A method comprising:

providing a substrate comprising a power pad, a nanotube attached to the power pad, wherein the nanotube comprises at least one side chain, a first switch pad disposed on a first side of the substrate and a second switch pad disposed on a second side of the substrate; and

setting the first switch pad to a first charge state substantially equal to a side chain charge state, wherein the nanotube bends to make contact with the second switch pad.

14. The method of claim 13 further comprising wherein the second switch pad comprises a second charge state substantially opposite of the side chain charge state.

15. The method of claim 13 further comprising setting the first charge state and a second charge state of the second switch pad to substantially the same sign, wherein the nanotube bends to an approximately midpoint position between the second switch pad and the first switch pad.

16. The method of claim 13 further comprising setting the first charge state to a sign opposite the side chain charge state, wherein the nanotube bends to make contact with the first switch pad.

17. The method of claim 16 further comprising setting a second charge state of the second switch pad to a sign substantially equal to the side chain charge state.

18. The method of claim 17 further comprising wherein a conductive path is made between the power pad, the first switch pad and a first current pad disposed on the first side of the substrate.

19. A structure comprising:

a substrate comprising a power pad; and

a nanotube attached to the power pad, wherein the nanotube comprises at least one side chain.

20. The structure of claim 19 further comprising a backbone structure, wherein a length of the backbone structure is disposed substantially parallel to a length of the nanotube, and wherein a length of the at least one side chain is disposed on the backbone structure substantially perpendicular to the length of the backbone structure.

21. The structure of claim 20 wherein the backbone structure comprises PPE.

22. The structure of claim 19 wherein the at least one side chain comprises an electronegative side chain.

23. The structure of claim 22 wherein the electronegative side chain comprises a side chain comprising a local negative charge.

24. The structure of claim 19 further comprising wherein the substrate comprises a first switch pad and a first current pad disposed on a first side of the substrate.

25. The structure of claim 24 further comprising wherein the substrate comprises a second switch pad and a second current pad disposed on a second side of the substrate.

26. The structure of claim 25, wherein the nanotube is disposed between the first switch pad and the second switch pad, and is capable of bending to make contact with at least one of the first switch pad and the second switch pad.

27. The structure of claim 26, wherein the nanotube is capable of making contact with at least one of the first switch pad and the second switch pad at a speed approximately equal to a clock speed of a CPU.

28. The structure of claim 19, wherein the nanotube comprises a diameter of about one nanometer to about 10 nanometers, and a length of about 1 micron to about 20 microns.

29. A system comprising:

a nanotube switching structure comprising a power pad and a nanotube attached to the power pad, wherein the nanotube is disposed between a first switch pad and a second switch pad, and wherein the nanotube is capable of bending to make contact with at least one of the first switch pad and the second switch pad;

a PCB communicatively coupled to the nanotube switching structure; and

a DRAM communicatively coupled to the nanotube switching structure.

30. The system of claim 29 wherein the nanotube further comprises at least one side chain, wherein the at least one side chain is capable of being electrically attracted to at least one of the first switch pad and the second switch pad.

31. The system of claim 29 further comprising a backbone structure, wherein a length of the backbone structure is disposed substantially parallel to a length of the nanotube, and wherein a length of the at least one side chain is disposed on the backbone structure substantially perpendicular to the length of the backbone structure.