Method of manufacturing an electronic device and electronic device
First Claim
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1. A method of manufacturing an electronic device, comprising:
- providing a wafer (10) with a first and an opposed second side, having first and second semiconductor layers (12, 16) with at least a layer of insulating material (14) therebetween, at which first side a semiconductor circuit is provided comprising semiconductor elements that are defined in the first semiconductor layer;
forming a micro-electromechanical systems (MEMS) device comprising a movable electrode and a reference electrode in said wafer by etching trenches according to a desired pattern extending substantially perpendicularly to a plane in the wafer, and releasing the movable electrode in that the trenches extend to the layer of insulating material that is selectively removed, characterized in that said MEMS device is formed in said second semiconductor layer (12) in that the trenches are etched from the second side of the wafer down to the layer of insulating material.
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Abstract
A method of manufacturing an electronic device, particularly an acceleration sensor, comprising providing a wafer (10) having first and second semiconductor layers (12, 16) with a buried oxide layer (14) therebetween and forming a semiconductor device (such as a detection circuit) on one side of the wafer (10) in the first semiconductor layer (16) and a micro-electromechanical systems (MEMS) device on the opposite side of the wafer (10) in the second semi-conductor layer (12).
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Citations
16 Claims
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1. A method of manufacturing an electronic device, comprising:
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providing a wafer (10) with a first and an opposed second side, having first and second semiconductor layers (12, 16) with at least a layer of insulating material (14) therebetween, at which first side a semiconductor circuit is provided comprising semiconductor elements that are defined in the first semiconductor layer;
forming a micro-electromechanical systems (MEMS) device comprising a movable electrode and a reference electrode in said wafer by etching trenches according to a desired pattern extending substantially perpendicularly to a plane in the wafer, and releasing the movable electrode in that the trenches extend to the layer of insulating material that is selectively removed, characterized in that said MEMS device is formed in said second semiconductor layer (12) in that the trenches are etched from the second side of the wafer down to the layer of insulating material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. An electronic device, comprising a substrate (10) with a first and an opposed second side, having first and second semiconductor layers (12, 16) with at least a layer of insulating material (14) therebetween, at which first side a semiconductor circuit is present comprising semiconductor elements that are defined in the first semiconductor layer, and further comprising a micro-electromechanical systems (MEMS) device, said MEMS device having a reference electrode and a movable electrode, said MEMS device being electrically coupled to said semiconductor circuit, said insulating layer being removed locally so as to allow the movable electrode to be movable,
characterized in that the MEMS device is defined in the second semiconductor layer.
Specification