Nitride semiconductor element and method for manufacturing thereof

• US 20060145182A1
• Filed: 03/26/2004
• Published: 07/06/2006
• Est. Priority Date: 07/15/2003
• Status: Abandoned Application

• Current Assignee: Kanagawa Academy of Science and Technology
• Original Assignee: Kanagawa Academy of Science and Technology
• Inventors: Oshima, Masaharu, Fujioka, Hiroshi
• Application Number:
  US10/563,630
• Publication Number:
  US 20060145182A1
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: C30B 25/18 characterised by the substrate
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: C30B 29/406 Gallium nitride
• CPC Class Codes: H01L 21/02403 Oxides
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/02433 Crystal orientation
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 29/045 by their particular orientation of crystalline planes
• CPC Class Codes: H01L 29/2003 Nitride compounds
• CPC Class Codes: H01L 33/007 comprising nitride compounds

Abstract

Disclosed is a method for the preparation of a nitride semiconductor device having a nitride semiconductor layer composed of InN on which a high quality layer of a semiconductor of a nitride of a group III element typified by InN or GaN is grown as traversing dislocation or an interfacing layer is suppressed from being generated. The method includes a vapor depositing step of vapor depositing InN on the (111) plane of a yttria stabilized zirconia substrate (12) for forming the nitride semiconductor layer oriented with c-axis of an InN crystal of the hexagonal system substantially vertical with respect to the (111) plane of the substrate (12).

Claims

1. A nitride semiconductor device comprising a substrate of yttria stabilized zirconia, referred to below as YSZ, and a nitride semiconductor layer including an InN crystal of the hexagonal system, said InN crystal being oriented with the c-axis thereof approximately vertical with respect to the (111) plane of said YSZ substrate.

2. The nitride semiconductor device according to claim 1 wherein an atomic step is formed on the (111) plane of said YSZ substrate.

3. A nitride semiconductor device comprising a ZnO substrate, and a nitride semiconductor layer including a GaN crystal of the hexagonal system, said GaN crystal being oriented with the c-axis thereof approximately vertical with respect to the (000-1) plane or the (0001) plane of said ZnO substrate.

4. The nitride semiconductor device according to claim 3 wherein an atomic step is formed on the (000-1) plane or on the (0001) plane of said ZnO substrate.

5. A nitride semiconductor device comprising a ZnO substrate, and a nitride semiconductor layer including an In_xGa_1-xN (0≦

x ≦

0.4) crystal of the hexagonal system, said In_xGa_1-xN crystal being oriented with the c-axis thereof approximately vertical with respect to the (000-1) plane or the (0001) plane of said ZnO substrate.

6. A method for the preparation of a nitride semiconductor device having a nitride semiconductor layer formed of InN, comprising

a vapor depositing step of vapor depositing said InN on the (111) plane of a substrate of yttria stabilized zirconia, referred to below as YSZ.

7. The method for the preparation of a nitride semiconductor device according to claim 6 wherein, in said vapor deposition step, said InN is grown epitaxially in accordance with a physical vapor deposition (PVD) method or a chemical vapor deposition (CVD) method.

8. The method for the preparation of a nitride semiconductor device according to claim 6 further comprising

a step of forming an atomic step in advance on said (111) plane of said YSZ substrate;

said InN being vapor-deposited in said vapor depositing step on the YSZ substrate on which said atomic step has been formed.

9. The method for the preparation of a nitride semiconductor device according to claim 8 wherein the YSZ substrate having crystal orientation in the (111) plane is heated at a temperature not lower than 800°

C.

10. A method for the preparation of a nitride semiconductor device having a nitride semiconductor layer formed of GaN, comprising

a vapor depositing step of vapor depositing GaN on the (000-1) plane or the (0001) plane of a ZnO substrate at a temperature not higher than 510°

C.

11. The method for the preparation of a nitride semiconductor device according to claim 10 wherein, in said vapor deposition step, said GaN is grown epitaxially in accordance with a physical vapor deposition (PVD) method or a chemical vapor deposition (CVD) method.

12. The method for the preparation of a nitride semiconductor device according to claim 10 further comprising

a step of forming an atomic step in advance on said (000-1) plane or the (0001) plane of said ZnO substrate;

said GaN being vapor-deposited in said vapor depositing step on the ZnO substrate on which said atomic step has been formed.

13. The method for the preparation of a nitride semiconductor device according to claim 12 wherein, in said step forming step, the ZnO substrate, having crystal orientation in the (000-1) plane or in the (0001) plane, is encircled with sintered ZnO and heated in this state to a temperature not lower than 800°

C.

14. The method for the preparation of a nitride semiconductor device according to claim 12 wherein, in said step forming step, the ZnO substrate, having crystal orientation in the (000-1) plane or in the (0001) plane, is encircled with a Zn containing material and heated in this state to a temperature not lower than 800°

C.

15. The method for the preparation of a nitride semiconductor device according to claim 10 wherein, in said vapor deposition step, GaN is vapor-deposited at ambient temperature.

16. A method for the preparation of a nitride semiconductor device having a nitride semiconductor layer formed of In_xGa_1-xN (0≦

x ≦

0.4), comprising

a vapor depositing step of vapor depositing said In_xGa_1-xN on the (000-1) plane or the (0001) plane of a ZnO substrate at a temperature not higher than 510°

C.

17. A semiconductor substrate comprising a yttria stabilized zirconia on the (111) plane of which an atomic step has been formed.

18. A semiconductor substrate comprising a ZnO substrate on the (000-1) plane or the (0001) plane of which an atomic step has been formed.

19. A method for the preparation of a nitride semiconductor substrate comprising a step of heating a substrate of yttria stabilized zirconia having crystal orientation in the (111) plane at a temperature not lower than 800°

C.

20. A method for the preparation of a nitride semiconductor substrate comprising a step of encircling a ZnO substrate having crystal orientation in the (000-1) plane or in the (0001) plane with sintered ZnO and heating the substrate in this state at a temperature not lower than 800°

C.

21. A method for the preparation of a nitride semiconductor substrate comprising a step of encircling a ZnO substrate having crystal orientation in the (000-1) plane or in the (0001) plane with a Zn-containing material and heating the substrate in this state at a temperature not lower than 800°

C.