Optical semiconductor device and fabrication method therefor
First Claim
1. A fabrication method for an optical semiconductor device, comprising the steps of:
- forming a semiconductor layer on a semiconductor substrate;
forming a groove by removing the semiconductor layer at an opening of a mask;
forming a first clad layer in the form of a projection having two symmetrical inclined faces in the groove by selective growth by using the mask as a selective growth mask;
forming an active layer on the two inclined faces of the first clad layer; and
removing the mask and burying the active layer with a second clad layer.
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Abstract
An optical semiconductor device such as, for example, a quantum dot SOA and a fabrication method therefor are disclosed wherein an active layer and a current constriction structure can be formed leftwardly and rightwardly symmetrically to minimize the polarization dependency. The fabrication method for an optical semiconductor device includes the steps of forming a semiconductor layer on a semiconductor substrate, forming a groove by removing the semiconductor layer at an opening of a mask, forming a first clad layer in the form of a projection having two symmetrical inclined faces in the groove by selective growth by using the mask as a selective growth mask, forming an active layer on the two inclined faces of the first clad layer, and removing the mask and burying the active layer with a second clad layer.
17 Citations
16 Claims
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1. A fabrication method for an optical semiconductor device, comprising the steps of:
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forming a semiconductor layer on a semiconductor substrate;
forming a groove by removing the semiconductor layer at an opening of a mask;
forming a first clad layer in the form of a projection having two symmetrical inclined faces in the groove by selective growth by using the mask as a selective growth mask;
forming an active layer on the two inclined faces of the first clad layer; and
removing the mask and burying the active layer with a second clad layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. An optical semiconductor device, comprising:
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a semiconductor substrate;
a clad layer in the form of a projection formed on said semiconductor substrate and having two symmetrical inclined faces;
an active layer formed on the two inclined faces of said clad layer; and
a semiconductor layer formed in a contacting relationship with at least side faces of said clad layer and having an equal thickness at portions in the proximity of contacting portions thereof with said clad layer and any other portion thereof than the portions. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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Specification