Radiation exposure apparatus comprising a gas flushing system

• US 20060146300A1
• Filed: 12/06/2005
• Published: 07/06/2006
• Est. Priority Date: 12/07/2004
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Van Dijk, Adrianus Hubertus Henricus, Simon, Klaus, Keijsers, Gerardus Johannes Joseph, Van Den Brink, Enno, Baijens, Hubertus Antonius Marinus
• Granted Patent: US 7,570,342 B2
• Time in Patent Office: Days
• US Class Current: 355/30
• CPC Class Codes: G03F 7/70933 Purge, e.g. exchanging fluid or gas to remove pollutants

Abstract

An exposure apparatus is provided with a radiation source, a patterning structure, a projection system, a substrate, and a gas flushing system for removing gas from an area between the projection system and the substrate.

Claims

1. A method of manufacturing a device comprising:

patterning a beam of radiation;

projecting the patterned beam of radiation via a projection system onto a target portion of a substrate comprising a radiation-sensitive layer; and

flowing a flushing gas from a first gas outlet positioned outside a circumference of said target portion to a space between said projection system and said substrate, wherein, during said projecting, at least part of said flushing gas flows towards said target portion.

2. The method according to claim 1, further comprising a gas inlet positioned outside the circumference of said target portion and in between said projection system and said first gas outlet, said gas inlet being constructed and arranged to extract gas from the area between said target portion and said projection system.

3. The method according to claim 1, further comprising flowing a second flushing gas from a second outlet port constructed and arranged to generate a substantially laminar gas flow of said second flushing gas across at least part of said patterned beam between a last lens of the projection system and said first outlet port.

4. The method according to claim 2, further comprising flowing a second flushing gas from a second outlet port constructed and arranged to generate a substantially laminar gas flow of said second flushing gas across at least part of said patterned beam between a last lens of the projection system and said first outlet port, wherein said gas inlet is positioned between said first gas outlet and said second gas outlet.

5. The method according to claims 1, wherein said flushing gas comprises at least 1 mole % oxygen.

6. The method of claim 5, wherein said flushing gas is air.

7. The method according to claim 1, wherein said first gas outlet is a radial gas flow outlet.

8. The method according to claim 1, wherein said first gas outlet, said second gas outlet, and said gas inlet are all provided in the same radial structure.

9. The method according to claim 1, wherein said projection beam of radiation has a wavelength in the range of 220 nm-435 nm.

10. The method according to claim 1, wherein said substrate comprises one or more layers required for the manufacturing of color filters.

11. The method of claim 1, wherein said device is an image sensor.

12. An image sensor obtained by the method according to claim 1.

13. A camera comprising the image sensor of claim 12.

14. A method comprising:

patterning a beam of radiation;

projecting the patterned beam of radiation via a projection system onto a target portion of a substrate comprising one or more resist layers for manufacturing one or more color filter layers; and

providing an air flow in the space between said target portion and said projection system to extract gases emanating from said target portion during said projecting.

15. The method of claim 14, wherein said air flow is created by sucking air from said space.

16. A lithographic projection apparatus comprising:

a radiation system constructed and arranged to supply a projection beam of radiation;

a support structure constructed and arranged to support a patterning structure, the patterning structure being constructed and arranged to pattern the projection beam according to a desired pattern;

a substrate support constructed and arranged to support a substrate;

a projection system constructed and arranged to project the patterned beam onto a target portion of the substrate; and

a gas flushing system constructed and arranged to extract gas from the space between the substrate support and the projection system.

17. The apparatus of claim 16, wherein said gas flushing system is constructed to only extract gas rather than also supply gas.

18. The apparatus of claim 16, wherein one or more openings are provided in said gas flushing system to allow access of sensor beams to the substrate.

19. The apparatus of claim 16, wherein said projection beam of radiation has a wavelength in the range of 220-435 nm.

20. The apparatus according to claim 16, wherein said apparatus is designed to operate in step mode.

21. The apparatus according to claim 16, wherein said apparatus is designed to operate in scan mode.

22. A process comprising exposing a substrate to radiation with the apparatus of claim 16.

23. The process of claim 22, wherein said substrate comprises one or more resist layers.

24. The process of claim 23, wherein said one or more resist layers are for the manufacturing of one or more color filter layers.

25. A gas flushing system constructed for use in a radiation exposure apparatus, the gas flushing system being designed to only extract gas and not supply gas.

26. A gas flushing system constructed for use in a radiation exposure apparatus, the system comprising one or more openings covered with a transparent material.