Optical microelectromechanical device

• US 20060146396A1
• Filed: 05/19/2005
• Published: 07/06/2006
• Est. Priority Date: 12/30/2004
• Status: Active Grant

• Current Assignee: AU Optronics Corporation, Snaptrack Incorporated (Qualcomm, Inc.)
• Original Assignee: AU Optronics Corporation
• Inventors: Lee, Chia-Sheng, Wong, Jia-Fam, Lin, Han-Tu
• Granted Patent: US 7,403,321 B2
• Time in Patent Office: Days
• US Class Current: 359/321
• CPC Class Codes: G02B 26/001 based on interference in an adjustable optical cavity interference filters G02B5/28; devices or arrangements using multiple reflections in spectrometry or monochromators G01J3/26

Abstract

An optical microelectromechanical systems (MEMS) device includes a transparent substrate with a plurality of discrete conductive lines, an dielectric layer disposed on the substrate and the conductive lines, reflective members and edge supporters. The reflective members and conductive lines are orthogonal, defining a plurality of pixel areas. Each reflective member is supported by edge supporters arranged around each pixel area and over the dielectric layer by a predetermined gap. The reflective members cover the connecting end of each edge supporter, providing protection from damage during fabrication.

Claims

1. An optical microelectromechanical device, comprising:

a substrate;

a plurality of conductive lines disposed on the substrate;

a dielectric layer disposed on the conductive lines;

a plurality of reflective members perpendicular to the conductive lines and over the dielectric layer by a predetermined gap, wherein a plurality of overlapping areas of the reflective members and the conductive lines define a plurality of pixel areas; and

a plurality of edge supporters disposed between the dielectric layer and reflective members and adjacent to the edges of each pixel area, wherein the reflective members substantially cover the at least one end of the at least one of the edge supporters.

2. The optical microelectromechanical device as claimed in claim 1, wherein the edge supporter and the nearest edge of the reflective member is kept least a first distance of about 0.3 μ

m to 1.0 μ

m.

3. The optical microelectromechanical device as claimed in claim 1, wherein the edge supporter comprises a horizontal extending top portion at the end contacting with the reflective members, and the horizontal extending top portion and the nearest edge of the reflective member is kept least a first distance of about 0.3 μ

m to 1.0 μ

m.

4. The optical microelectromechanical device as claimed in claim 1, wherein the edge supporter and the nearest edge of each conductive line is kept least a second distance of about 0.3 μ

m to 1.0 μ

m.

5. The optical microelectromechanical device as claimed in claim 1, wherein the predetermined gap is between about 1000 Å

and 8000 Å

.

6. The optical microelectromechanical device as claimed in claim 1, further comprising a plurality of inner supporters disposed, between the dielectric layer and reflective members within each pixel area.

7. The optical microelectromechanical device as claimed in claim 6, wherein the edge supporters and inner supporters comprise a photoresist or a polymer.

8. The optical microelectromechanical device as claimed in claim 1, wherein the conductive lines comprise INDIUM TIN OXIDE (ITO) or chromium (Cr).

9. The optical microelectromechanical device as claimed in claim 1, wherein the reflective member comprises Ag, Al, Rb(Al)x, Ni, or Cr.

10. The optical microelectromechanical device as claimed in claim 1, wherein the edge supporters directly contact with the reflective members.

11. The optical microelectromechanical device as claimed in claim 1, wherein the edge supporter is disposed between two adjacent pixel areas.

12. An optical microelectromechanical device, comprising:

a substrate;

a plurality of conductive lines disposed on the substrate;

a dielectric layer disposed on the conductive lines;

a plurality of reflective members perpendicular to the conductive lines and over the dielectric layer by a predetermined gap, wherein a plurality of overlapping areas of the reflective members and the conductive lines define a plurality of pixel areas; and

a plurality of edge supporters disposed between the dielectric layer and reflective members and adjacent to the edges of each pixel areas, wherein at least one end of one of the edge supporters and the nearest edge of the reflective member is kept least a first distance of about 0.3 μ

m to 1.0 μ

m, and the at least one end of one of the edge supporters and the nearest edge of each conductive line is kept least a second distance.

13. The optical microelectromechanical device as claimed in claim 12, wherein the predetermined gap is between about 1000 Å

and 8000 Å

.

14. The optical microelectromechanical device as claimed in claim 12, further comprising a plurality of inner supporters disposed, between the dielectric layer and reflective members within each pixel area.

15. The optical microelectromechanical device as claimed in claim 14, wherein the edge supporters and inner supporters comprise a photoresist or a polymer.

16. The optical microelectromechanical device as claimed in claim 12, wherein the conductive lines comprise INDIUM TIN OXIDE (ITO) or chromium (Cr).

17. The optical microelectromechanical device as claimed in claim 12, wherein the reflective member comprises Ag, Al, Rb(Al)x, Ni, or Cr.

18. The optical microelectromechanical device as claimed in claim 12, wherein the edge supporter is disposed between two adjacent pixel areas.

19. An optical microelectromechanical device, comprising:

a substrate;

a plurality of conductive lines disposed on the substrate;

a dielectric layer disposed on the conductive lines;

a plurality of reflective members perpendicular to the conductive lines and over the dielectric layer by a predetermined gap, wherein a plurality of overlapping areas of the reflective members and the conductive lines define a plurality of pixel areas; and

a plurality of edge supporters disposed between the dielectric layer and reflective members, and adjacent to the edges of each pixel areas, wherein at least one end of one of the edge supporters and the nearest edge of the reflective member is kept at a first distance, and the at least one end of one of the edge supporters and the nearest edge of the conductive lines is kept least a second distance of about 0.3 μ

m to 1.0 μ

m.

20. The optical microelectromechanical device as claimed in claim 19, the first distance is between about 0.3 μ

m and 1.0 μ

m.

21. The optical microelectromechanical device as claimed in claim 19, wherein the predetermined gap is between about 1000 Å

and 8000 Å

.

22. The optical microelectromechanical device as claimed in claim 19, further comprising a plurality of inner supporters disposed, between the dielectric layer and conductive lines within each pixel area.

23. The optical microelectromechanical device as claimed in claim 22, wherein the edge supporters and inner supporters comprise a photoresis or a polymer.

24. The optical microelectromechanical device as claimed in claim 19, wherein the conductive lines comprise INDIUM TIN OXIDE (ITO) or chromium (Cr).

25. The optical microelectromechanical device as claimed in claim 19, wherein the reflective member comprises Ag, Al, Rb(Al)x, Ni, or Cr.