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Method of pulsing vapor precursors in an ALD reactor

  • US 20060147626A1
  • Filed: 12/30/2004
  • Published: 07/06/2006
  • Est. Priority Date: 12/30/2004
  • Status: Active Grant
First Claim
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1. A method of growing a thin film on a substrate by pulsing vapor-phase precursors material into a reaction chamber according to the ALD method, comprising:

  • vaporizing at least one precursor from a source material container maintained at a vaporising temperature;

    repeatedly feeding pulses of said vaporized precursor via a feed line into said reaction chamber at a first pressure and subsequently purging said reaction chamber with pulses of inactive gas fed via said feed line at a second pressure; and

    maintaining said second pressure higher than or equal to said first pressure for separating successive pulses of said vaporized precursor from each other.

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