Sputtering target, thin film for optical information recording medium and process for producing the same
First Claim
1. A sputtering target having a relative density of 90% or more and containing a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 4≦
- m≦
8, X≦
m, 0<
Y≦
0.9, X+Y=2, where m is an integral number and A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb, wherein a range of variation of positive elements other than zinc in the target is within 0.5% and a range of variation of density in the target is within 3%.
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0 Petitions
Accused Products
Abstract
Provided is a sputtering target having a relative density of 80% or more and containing a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 1<m, X≦m, 0<Y≦0.9, X+Y=2, where A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb. Obtained is a ZnO based sputtering target which does not contain ZnS and SiO2, and, upon forming a film via sputtering, is capable of reducing the affect of heating the substrate, of performing high speed deposition, of adjusting the film thickness to be thin, of reducing the generation of particles (dust) and nodules during sputtering, of improving the productivity with small variation in quality, and which has fine crystal grains and a high density of 80% or more, particularly 90% or more.
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Citations
11 Claims
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1. A sputtering target having a relative density of 90% or more and containing a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 4≦
- m≦
8, X≦
m, 0<
Y≦
0.9, X+Y=2, where m is an integral number and A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb, wherein a range of variation of positive elements other than zinc in the target is within 0.5% and a range of variation of density in the target is within 3%.
- m≦
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2-8. -8. (canceled)
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9. A thin film for an optical information recording medium prepared by a process comprising the step of forming the thin film by sputtering a sputtering target that has a relative density of 90% or more and that contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 4≦
- m≦
8, X≦
m, 0<
Y≦
0.9, X+Y=2, where m is an integral number and A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb, and wherein a range of variation of positive elements other than zinc in the target is within 0.5% and a range of variation of density in the target is within 3%. - View Dependent Claims (10)
- m≦
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11. A method of manufacturing a thin film for an optical information recording medium comprising the step of forming a thin film via direct current sputtering of a sputtering target that has a relative density of 90% or more and that contains a compound having as its principal component zinc oxide satisfying AXBYO(KaX+KbY)/2(ZnO)m, 4≦
- m≦
8, X≦
m, 0<
Y≦
0.9, X+Y=2, where m is an integral number and A and B are respectively different positive elements of trivalence or more, and the valencies thereof are respectively Ka and Kb, and wherein a range of variation of positive elements other than zinc in the target is within 0.5% and a range of variation of density in the target is within 3%.
- m≦
Specification