Multi-transmission phase mask and method for manufacturing the same

• US 20060147816A1
• Filed: 03/03/2005
• Published: 07/06/2006
• Est. Priority Date: 12/30/2004
• Status: Abandoned Application

• Current Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Inventors: Park, Chan Ha
• Application Number:
  US11/073,183
• Publication Number:
  US 20060147816A1
• Time in Patent Office: Days
• US Class Current: 430/5
• CPC Class Codes: G03F 1/34 Phase-edge PSM, e.g. chromeless PSM; Preparation thereof

Abstract

A multi-transmission phase mask, and a method of manufacturing a multi-transmission phase mask are disclosed. The method comprises the steps of primarily patterning a light shielding layer after forming the light shielding layer on a light transmissive substrate, forming a plurality of pattern regions of a semiconductor by etching the light transmissive substrate to a predetermined depth using the primarily patterned light shielding layer, and secondarily patterning the light shielding layer and forming a phase shift region between the adjacent pattern regions of the semiconductor such that a predetermined portion of a surface of the light transmissive substrate is exposed to the outside between the adjacent pattern regions of the semiconductor. Each of the pattern regions provides a phase delay of 180° while a gap between the pattern regions provides a phase delay of 0°, thereby realizing a minute pattern and a critical dimension of the pattern with high precision.

Claims

1. A multi-transmission phase mask used for an exposure apparatus, comprising:

a light transmissive substrate of the mask;

a light shielding layer formed on the light transmissive substrate so as to prevent light from being transmitted therethrough and defining a plurality of pattern regions of a semiconductor; and

a phase shift region formed between adjacent pattern regions such that a predetermined portion of a surface of the light transmissive substrate between the adjacent pattern regions of the semiconductor is exposed to the outside, the pattern region of the semiconductor being formed by etching the light transmissive substrate to a predetermined depth through the light shielding layer.

2. The mask according to claim 1, wherein the phase shift region has a phase difference of 180°

to the pattern region.

3. The mask according to claim 1, wherein the phase shift region is formed in the direction of the row between the adjacent patterned regions.

4. The mask according to claim 1, wherein the phase shift region is formed in the direction of the column between the adjacent patterned regions.

5. The mask according to claim 1, wherein each of the pattern regions comprises an assistant pattern region.

6. A method of manufacturing a multi-transmission phase mask used for an exposure apparatus, comprising the steps of:

first patterning a light shielding layer after forming the light shielding layer on a light transmissive substrate;

forming a plurality of pattern regions of a semiconductor by etching the light transmissive substrate to a predetermined depth using the first patterned light shielding layer; and

secondarily patterning the light shielding layer and forming a phase shift region between adjacent pattern regions of the semiconductor such that a predetermined portion of a surface of the light transmissive substrate is exposed to the outside between the adjacent pattern regions of the semiconductor.

7. The method according to claim 6, wherein the phase shift region has a phase difference of 180°

to the pattern region.

8. The method according to claim 6, wherein the phase shift region is formed in the direction of the row between the adjacent patterned regions.

9. The method according to claim 6, wherein the phase shift region is formed in the direction of the column between the adjacent patterned regions.

10. The method according to claim 6, wherein the primarily patterning of the light shielding layer comprises an exposure process and an etching process using a modified illumination system having at least two poles, each having a preset opening angle.

11. The method according to claim 6, wherein the secondarily patterning of the light shielding layer comprises an exposure process and an etching process using a modified illumination system having at least two poles, each having a preset opening angle.