Deuterium alloy process for image sensors
First Claim
Patent Images
1. In a method of manufacturing a CMOS image sensor, a method of alloying the CMOS image sensor comprising:
- forming a pixel array in a semiconductor substrate, said pixel array formed from photodiodes;
forming semiconductor devices in an n-channel periphery area;
forming semiconductor devices in a p-channel periphery area;
forming an insulator layer over said photodiodes and semiconductor devices; and
using deuterium gas to alloy said image sensor after said insulator oxide layer has been formed and prior to formation of contact holes in said insulator oxide layer.
1 Assignment
0 Petitions
Accused Products
Abstract
A method of alloying an image sensor is disclosed. The method comprises forming various semiconductor devices in a semiconductor substrate. Then, an insulator layer is formed over the semiconductor devices. Finally, deuterium gas is used to alloy said image sensor after the insulator oxide layer has been formed and prior to formation of contact holes in the insulator oxide layer.
64 Citations
13 Claims
-
1. In a method of manufacturing a CMOS image sensor, a method of alloying the CMOS image sensor comprising:
-
forming a pixel array in a semiconductor substrate, said pixel array formed from photodiodes;
forming semiconductor devices in an n-channel periphery area;
forming semiconductor devices in a p-channel periphery area;
forming an insulator layer over said photodiodes and semiconductor devices; and
using deuterium gas to alloy said image sensor after said insulator oxide layer has been formed and prior to formation of contact holes in said insulator oxide layer. - View Dependent Claims (3)
-
-
2. (canceled)
-
4. (canceled)
-
5. In a process for manufacturing a CMOS image sensor, a method of alloying the CMOS image sensor comprising:
-
forming a pixel array in a semiconductor substrate, said pixel array formed from photodiodes;
forming semiconductor devices in an n-channel periphery area;
forming semiconductor devices in a p-channel periphery area;
forming an insulator layer over said photodiodes and semiconductor devices;
forming contact holes in said insulator layer; and
using deuterium gas to alloy said image sensor after said insulator oxide layer has been formed and prior to formation of contact plugs in said contact holes. - View Dependent Claims (7)
-
-
6. (canceled)
-
8. (canceled)
-
9. A method of alloying an image sensor comprising:
-
forming a pixel array in a semiconductor substrate;
forming semiconductor devices in an n-channel periphery area;
forming semiconductor devices in a p-channel periphery area;
forming an insulator layer over said pixel array and semiconductor devices;
forming contact holes in said insulator layer;
forming contact plugs in said contact holes; and
using deuterium gas to alloy said image sensor after said contact plugs have been formed and prior to deposition of a metal interconnect layer. - View Dependent Claims (10, 11, 12)
-
-
13-16. -16. (canceled)
Specification