Please download the dossier by clicking on the dossier button x
×

Atomic layer deposited hafnium tantalum oxide dielectrics

  • US 20060148180A1
  • Filed: 01/05/2005
  • Published: 07/06/2006
  • Est. Priority Date: 01/05/2005
  • Status: Active Grant
First Claim
Patent Images

1. A method comprising:

  • forming a source region and a drain region separated by a body region;

    forming a gate; and

    forming a dielectric layer above the body region and below the gate, the dielectric layer containing a hafnium tantalum oxide layer, the hafnium tantalum oxide layer formed by atomic layer deposition including;

    introducing a precursor containing hafnium to a substrate; and

    introducing a precursor containing tantalum to the substrate.

View all claims
  • 8 Assignments
Timeline View
Assignment View
    ×
    ×