Plasma process device

• US 20060150914A1
• Filed: 02/20/2004
• Published: 07/13/2006
• Est. Priority Date: 02/25/2003
• Status: Abandoned Application

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Tadahiro Ohmi
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.), Tadahiro Ohmi
• Inventors: Yamamoto, Tatsushi, Ohmi, Tadahiro, Hirayama, Masaki, Yamamoto, Naoko
• Application Number:
  US10/545,355
• Publication Number:
  US 20060150914A1
• Time in Patent Office: Days
• US Class Current: 118/723.MW
• CPC Class Codes: H01J 37/32192 Microwave generated discharge H01J37/32357, H01J37/32366, H01J37/32394, H01J37/32403 take precedence
• CPC Class Codes: H01J 37/3222 Antennas
• CPC Class Codes: H01J 37/32238 Windows
• CPC Class Codes: H05H 1/46 using applied electromagnetic fields, e.g. high frequency or microwave energy H05H1/26 takes precedence

Abstract

A plasma processing apparatus includes: a processing chamber; an inlet waveguide having an interior space in which a first standing wave of a microwave is formed by means of resonance; a dielectric within which a second standing wave of the microwave is formed by means of resonance; and a slot antenna having a slot through which the microwave is passed from the interior space to the dielectric. The slot is generally located at a point where the position of a loop in the first standing wave orthogonally projected to the slot antenna coincides with the position of a loop in the second standing wave orthogonally projected to the slot antenna. The present invention provides a plasma processing apparatus that improves the propagation efficiency of a microwave passed through an aperture of the slot antenna, thereby allowing microwave energy to be efficiently introduced into a processing chamber.

Claims

1. A plasma processing apparatus comprising:

a processing chamber for performing plasma-assisted processing;

microwave introducing means having an interior space in which a first standing wave of a microwave is formed by means of resonance, the microwave introducing means directing the microwave to said processing chamber;

a dielectric provided between said processing chamber and said microwave introducing means and adjacent said interior space for directing the microwave into said processing chamber, a second standing wave of the microwave being formed within the dielectric by means of resonance; and

a slot antenna having an aperture through which the microwave is passed from said interior space to said dielectric, the slot antenna covering a side of said dielectric that faces said interior space, wherein

said aperture is generally located at a point where the position of a loop in the first standing wave orthogonally projected to said slot antenna coincides with the position of a loop in the second standing wave orthogonally projected to said slot antenna.

2. The plasma processing apparatus according to claim 1, wherein a plurality of apertures are provided at a distance d, the distance d satisfying d=m·

λ

p/2 (m is a natural number) and d=n·

λ

q/2 (n is a natural number), where λ

p is the wavelength of the microwave in said interior space in which the first standing wave is formed, and λ

q is the wavelength of the microwave within said dielectric in which the second standing wave is formed.

3. The plasma processing apparatus according to claim 1, wherein the first and second standing waves have electric fields substantially in one and the same direction at those loops in the first and second standing waves which are projected to one and the same aperture.