Sputtering system and manufacturing method of thin film
First Claim
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1. A method for manufacturing a semiconductor device comprising the steps of:
- coating a surface of a part of a sputtering chamber by spraying a material including a semiconductor material;
forming a first insulating film on a substrate by sputtering in the sputtering chamber;
forming a semiconductor layer over the first insulating film;
forming a gate insulating film over the semiconductor layer;
forming a gate electrode over the gate insulating film; and
forming a second insulating film over the gate electrode.
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Abstract
It is an object to provide a sputtering system that enables forming a high-quality thin film including no impurity, and it is also an object of the present invention to provide a method for manufacturing a high-quality thin film with the sputtering system. The present invention provides a sputtering system including a target material and a part coated with a spray material including the same material as the target material. The present invention also provides a method for manufacturing a thin film including one of a target material, oxide of the target material, and nitride of the target material, which includes preparing a sputtering system including the target material and a part coated with a spray material including the same material as the target material, and applying high-frequency power in an atmosphere including rare gas.
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Citations
32 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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coating a surface of a part of a sputtering chamber by spraying a material including a semiconductor material;
forming a first insulating film on a substrate by sputtering in the sputtering chamber;
forming a semiconductor layer over the first insulating film;
forming a gate insulating film over the semiconductor layer;
forming a gate electrode over the gate insulating film; and
forming a second insulating film over the gate electrode. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method for manufacturing a semiconductor device comprising the steps of:
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coating a surface of a part of a sputtering chamber by spraying a material including a semiconductor material;
forming a first insulating film on a substrate;
forming a semiconductor layer over the first insulating film by sputtering in the sputtering chamber;
forming a gate insulating film over the semiconductor layer;
forming a gate electrode over the gate insulating film; and
forming a second insulating film over the gate electrode. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A method for manufacturing a semiconductor device comprising the steps of:
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coating a surface of a part of a sputtering chamber by spraying a material including a semiconductor material;
forming a first insulating film on a substrate;
forming a semiconductor layer over the first insulating film;
forming a gate insulating film over the semiconductor layer;
forming a gate electrode over the gate insulating film; and
forming a second insulating film over the gate electrode by sputtering in the sputtering chamber. - View Dependent Claims (14, 15, 16, 17, 18)
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19. A method for manufacturing a light emitting device comprising the steps of:
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coating a surface of a part of a sputtering chamber by spraying a material including a semiconductor material;
forming a first insulating film on a substrate by sputtering in the sputtering chamber;
forming a semiconductor layer over the first insulating film;
forming a gate insulating film over the semiconductor layer;
forming a gate electrode over the gate insulating film;
forming a second insulating film over the gate electrode;
forming a third insulating film over the second insulating film forming an anode electrically connected to the semiconductor layer over the third insulating film;
forming a light emitting layer over the anode; and
forming a cathode over the light emitting layer. - View Dependent Claims (20, 21, 22, 23, 24, 25)
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26. A method for manufacturing a light emitting device comprising the steps of:
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coating a surface of a part of a sputtering chamber by spraying a material including a semiconductor material;
forming a first insulating film on a substrate;
forming a semiconductor layer over the first insulating film;
forming a gate insulating film over the semiconductor layer;
forming a gate electrode over the gate insulating film;
forming a second insulating film over the gate electrode by sputtering in the sputtering chamber;
forming a third insulating film over the second insulating film forming an anode electrically connected to the semiconductor layer over the third insulating film;
forming a light emitting layer over the anode; and
forming a cathode over the light emitting layer. - View Dependent Claims (27, 28, 29, 30, 31, 32)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsKoura, Akihiko, Maruyama, Tetsunori, Takayama, Toru, Fukuchi, Kunihiko
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Application NumberUS11/373,273Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current204/192.220CPC Class CodesC23C 14/34 SputteringC23C 14/564 Means for minimising impuri...H01J 37/3429 Plural materials
