Light emitting diode with thermo-electric cooler
First Claim
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1. A method for cooling a light emitting diode, comprising:
- depositing one or more metal layers on a substrate;
forming an n-gallium nitride (n-GaN) layer above the metal layer; and
depositing a thermoelectric cooler in the metal layer to dissipate heat.
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Abstract
Systems and methods for fabricating a light emitting diode include depositing one or more metal layers on a substrate; forming an n-gallium nitride (n-GaN) layer above the metal layer; and depositing a thermoelectric cooler in the metal layer to dissipate heat.
119 Citations
20 Claims
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1. A method for cooling a light emitting diode, comprising:
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depositing one or more metal layers on a substrate;
forming an n-gallium nitride (n-GaN) layer above the metal layer; and
depositing a thermoelectric cooler in the metal layer to dissipate heat. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A method for fabricating a light emitting diode, comprising:
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providing a carrier substrate;
depositing a multilayer epitaxial structure;
depositing one or more metal layers above the multilayer epitaxial structure;
defining one or more mesas using etching;
forming one or more non conductive layers;
removing a portion of the non conductive layers;
depositing at least one or more metal layers;
depositing a semiconductor thermoelectric cooler on the metal layer; and
removing the carrier substrate.
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16. An LED, comprising:
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one or more metal layers on a substrate;
an n-gallium nitride (n-GaN) layer above the metal layer; and
a thermo-electric cooler in the metal layer to dissipate heat. - View Dependent Claims (17, 18, 19, 20)
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Specification