Package for gallium nitride semiconductor devices
First Claim
1. A semiconductor device comprising:
- a semiconductor die having a top surface including a lower semiconductor layer and an upper semiconductor layer disposed over a portion of said lower semiconductor layer, said lower semiconductor layer and said upper semiconductor layer being of the same conductivity type, said lower semiconductor layer being more highly doped than said upper semiconductor layer, said semiconductor die including a plurality of mesas projecting upwardly from said lower contact surface, each of said plurality of mesas including a portion of said upper layer and defining an upper contact surface separated from adjacent ones of said plurality of mesas by a portion of said lower contact surface; and
a bottom surface opposite to said top surface;
a die mounting support, wherein the bottom surface of said die is attached to the top surface of said die mounting support;
a housing enclosing said semiconductor die and die mounting support;
a plurality of spaced external conductors extending from said housing, at least one of said spaced external conductors having a bond wire post at one end thereof; and
a first bonding wire extending between one of said bond wire posts and a first contact region common to said plurality of mesas.
3 Assignments
0 Petitions
Accused Products
Abstract
A packaged semiconductor device, in particular a gallium nitride semiconductor structure including a lower semiconductor layer and an upper semiconductor layer disposed over a portion of the lower semiconductor layer. The semiconductor structure includes a plurality of mesas projecting upwardly from the lower layer, each of the mesas including a portion of the upper layer and defining an upper contact surface separated form adjacent mesas by a portion of the lower layer surface. The device further includes a die mounting support, wherein the bottom surface of the die is attached to the top surface of the die mounting support; and a plurality of spaced external conductors extending from the support, at least once of said spaced external conductors having a bond wire post at one end thereof; with a bonding wire extending between the bond wire post and a contact region to the top surface of the plurality of mesas.
50 Citations
15 Claims
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1. A semiconductor device comprising:
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a semiconductor die having a top surface including a lower semiconductor layer and an upper semiconductor layer disposed over a portion of said lower semiconductor layer, said lower semiconductor layer and said upper semiconductor layer being of the same conductivity type, said lower semiconductor layer being more highly doped than said upper semiconductor layer, said semiconductor die including a plurality of mesas projecting upwardly from said lower contact surface, each of said plurality of mesas including a portion of said upper layer and defining an upper contact surface separated from adjacent ones of said plurality of mesas by a portion of said lower contact surface; and
a bottom surface opposite to said top surface;
a die mounting support, wherein the bottom surface of said die is attached to the top surface of said die mounting support;
a housing enclosing said semiconductor die and die mounting support;
a plurality of spaced external conductors extending from said housing, at least one of said spaced external conductors having a bond wire post at one end thereof; and
a first bonding wire extending between one of said bond wire posts and a first contact region common to said plurality of mesas. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device comprising:
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a semiconductor die having a top surface including a lower semiconductor layer and an upper semiconductor layer disposed over a portion of said lower semiconductor layer, said lower semiconductor layer and said upper semiconductor layer being of the same conductivity type, said lower semiconductor layer being more highly doped than said upper semiconductor layer;
a first metal layer disposed over the upper layer and forming a Schottky junction on each of a plurality of mesas projecting upwardly from said lower contact surface, each of said plurality of mesas including a portion of said upper layer and defining an upper contact surface separated from adjacent ones of said plurality of mesas by a portion of said lower contact surface, a second metal layer disposed over said first metal layer and making electrical contact with each of the Schottky devices on said mesas and forms a first electrode bonding surface;
a third metal layer disposed over portions of said lower semiconductor layer and making ohmic contact therewith; and
a fourth metal layer disposed over said third metal layer and forming a second electrode bonding surface. - View Dependent Claims (12, 13, 14, 15)
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Specification