Semiconductor device and method of manufacturing the same
First Claim
1. A method of manufacturing a semiconductor device, comprising:
- forming a first insulation layer on a semiconductor substrate provided with an isolation layer and an active region;
exposing a part of the active region by patterning the first insulation layer;
forming a second insulation layer on the patterned first insulation layer;
forming a contact hole exposing the active region and the edge portion of the first insulation layer by patterning the second insulation layer; and
forming a metal layer on the second insulation layer and the exposed active region.
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Accused Products
Abstract
A method of manufacturing a semiconductor device consistent with embodiments of the present invention includes forming a first insulation layer on a semiconductor substrate provided with an isolation layer and an active region; exposing a part of the active region by patterning the first insulation layer; forming a second insulation layer on the patterned first insulation layer; forming a contact hole exposing the active region and the edge portion of the first insulation layer by patterning the second insulation layer; and forming a metal layer on the second insulation layer and the exposed active region. Consequently, a junction leakage current that may be generated at the interface between the active region and the isolation layer in forming the metal contact hole can be suppressed, so the yield and reliability of devices may be enhanced.
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Citations
18 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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forming a first insulation layer on a semiconductor substrate provided with an isolation layer and an active region;
exposing a part of the active region by patterning the first insulation layer;
forming a second insulation layer on the patterned first insulation layer;
forming a contact hole exposing the active region and the edge portion of the first insulation layer by patterning the second insulation layer; and
forming a metal layer on the second insulation layer and the exposed active region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device, comprising:
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a semiconductor substrate provided with an isolation layer and an active region;
a first insulation layer pattern formed on the semiconductor substrate and exposing a part of the active region;
a second insulation layer pattern formed on the first insulation layer pattern and having a contact hole pattern exposing the active region and the edge portion of the first insulation layer pattern; and
a metal layer formed on the second insulation layer pattern and the exposed active region. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18)
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Specification