MRAM DEVICE WITH IMPROVED STACK STRUCTURE AND OFFSET FIELD FOR LOW-POWER TOGGLE MODE WRITING
First Claim
1. A magnetic random access memory (MRAM) device, comprising:
- a reference magnetic region having a resultant magnetic moment vector generally maintained in a desired orientation without the use of exchange coupling thereto;
a storage magnetic region having an anisotropy easy axis and a resultant magnetic moment vector oriented in a position parallel or antiparallel to that of said reference magnetic region;
a tunnel barrier disposed between said reference magnetic region and said storage magnetic region;
said reference magnetic region, said storage magnetic region and said tunnel barrier defining a storage cell configured for a write operation thereto by a toggle mode; and
said storage cell having an offset field applied thereto so as to generally maintain said resultant magnetic moment vector of said reference magnetic region in said desired orientation.
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Accused Products
Abstract
A magnetic random access memory (MRAM) device includes a reference magnetic region having a resultant magnetic moment vector generally maintained in a desired orientation without the use of exchange coupling thereto. A storage magnetic region has an anisotropy easy axis and a resultant magnetic moment vector oriented in a position parallel or antiparallel to that of the reference magnetic region. A tunnel barrier is disposed between the reference magnetic region and the storage magnetic region, with the reference magnetic region, storage magnetic region and tunnel barrier defining a storage cell configured for a toggle mode write operation. The storage cell has an offset field applied thereto so as to generally maintain the resultant magnetic moment vector of the reference magnetic region in the desired orientation.
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Citations
30 Claims
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1. A magnetic random access memory (MRAM) device, comprising:
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a reference magnetic region having a resultant magnetic moment vector generally maintained in a desired orientation without the use of exchange coupling thereto;
a storage magnetic region having an anisotropy easy axis and a resultant magnetic moment vector oriented in a position parallel or antiparallel to that of said reference magnetic region;
a tunnel barrier disposed between said reference magnetic region and said storage magnetic region;
said reference magnetic region, said storage magnetic region and said tunnel barrier defining a storage cell configured for a write operation thereto by a toggle mode; and
said storage cell having an offset field applied thereto so as to generally maintain said resultant magnetic moment vector of said reference magnetic region in said desired orientation. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for forming a magnetic random access memory (MRAM) device, the method comprising:
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forming a reference magnetic region having a resultant magnetic moment vector generally maintained in a desired orientation without the use of exchange coupling thereto;
forming a storage magnetic region having an anisotropy easy axis and a resultant magnetic moment vector oriented in a position parallel or antiparallel to that of said reference magnetic region;
disposing a tunnel barrier between said reference magnetic region and said storage magnetic region;
said reference magnetic region, said storage magnetic region and said tunnel barrier defining a storage cell configured for a write operation thereto by a toggle mode; and
applying an offset field to said storage cell so as to generally maintain said resultant magnetic moment vector of said reference magnetic region in said desired orientation. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17)
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18. A magnetic random access memory (MRAM) device, comprising:
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a reference magnetic region having a resultant magnetic moment vector generally maintained in a desired orientation by a bias element physically separated from said reference magnetic region by a spacer layer;
a storage magnetic region having an anisotropy easy axis and a resultant magnetic moment vector oriented in a position parallel or antiparallel to that of said reference magnetic region;
a tunnel barrier disposed between said reference magnetic region and said storage magnetic region;
said reference magnetic region, said storage magnetic region and said tunnel barrier defining a storage cell configured for a write operation thereto by a toggle mode;
said bias element and said spacer layer further configured within a vertical stack of said storage cell; and
said bias element configured to generate an offset field applied to said storage cell so as to generally maintain said resultant magnetic moment vector of said reference magnetic region in said desired orientation. - View Dependent Claims (19, 20, 21, 22, 23, 30)
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24. A method for forming a magnetic random access memory (MRAM) device, the method comprising:
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forming a reference magnetic region having a resultant magnetic moment vector generally maintained in a desired orientation by a bias element physically separated from said reference magnetic region by a spacer layer;
forming a storage magnetic region having an anisotropy easy axis and a resultant magnetic moment vector oriented in a position parallel or antiparallel to that of said reference magnetic region;
disposing a tunnel barrier between said reference magnetic region and said storage magnetic region;
said reference magnetic region, said storage magnetic region and said tunnel barrier defining a storage cell configured for a write operation thereto by a toggle mode;
said bias element and said spacer layer further configured within a vertical stack of said storage cell; and
using said bias element to generate an offset field applied to said storage cell so as to generally maintain said resultant magnetic moment vector of said reference magnetic region in said desired orientation. - View Dependent Claims (25, 26, 27, 28, 29)
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Specification