Exposure apparatus and method for producing device

• US 20060154183A1
• Filed: 03/02/2006
• Published: 07/13/2006
• Est. Priority Date: 12/10/2002
• Status: Abandoned Application

• Current Assignee: Nikon Corporation
• Original Assignee: Nikon Corporation
• Inventors: Magome, Nobutaka
• Application Number:
  US11/365,869
• Publication Number:
  US 20060154183A1
• Time in Patent Office: Days
• US Class Current: 430/322
• CPC Class Codes: G03F 7/70341 Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply chemical composition of immersion liquids G03F7/2041
• CPC Class Codes: G03F 7/7075 Handling workpieces outside exposure position, e.g. SMIF box
• CPC Class Codes: G03F 7/70991 Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
• CPC Class Codes: Y10S 430/146 Laser beam

Abstract

An exposure apparatus which performs an exposure while filling a space between a projection optical system and a substrate with liquid, and in which deterioration of a device caused by adherent liquid on the substrate is suppressed is provided. A device manufacturing system (SYS) includes a main body of an exposure apparatus (EX) which fills a space between a projection optical system (PL) and a substrate (P) with a liquid (50) and projects an image of a pattern onto the substrate (P) via the projection optical system (PL) and the liquid (50); an interface section (IF) arranged between the exposure apparatus main body (EX) and a coater/developer main body (C/D) which processes the substrate (P) after exposure; and a liquid-removing unit (100) which removes the liquid (50) adhering to the substrate (P) before the exposed substrate (P) is transferred into the coater/developer main body (C/D) through the interface section (IF).

Claims

1. A method of transferring a pattern to a thin film of radiation-sensitive material on a substrate using photolithography comprising:

exposing said thin film to a radiation source in a liquid immersion lithography system; and

drying said substrate following said exposure in said liquid immersion lithography system to remove an immersion fluid from said substrate.

2. The method of claim 1, wherein said drying comprises rotating said substrate.

3. The method of claim 1, wherein said exposing comprises exposing a radiation-sensitive material.

7. The method of claim 1, further comprising:

forming a thin film of radiation-sensitive material on said substrate prior to said exposing; and

developing thin film on said substrate to form said pattern.

8. The method of claim 7, wherein said forming comprises:

coating said substrate with said thin film.

17. A semiconductor integrated circuit produced from a method claimed in claim 1.

18. A semiconductor integrated circuit produced from a method claimed in claim 2.

19. A semiconductor integrated circuit produced from a method claimed in claim 3.

23. A semiconductor integrated circuit produced from a method claimed in claim 7.

24. A semiconductor integrated circuit produced from a method claimed in claim 8.

4. A method of treating an exposed thin film on a substrate following liquid immersion lithography comprising:

drying said substrate to remove immersion liquid from said exposed thin film on said substrate.

5. The method of claim 4, wherein said drying comprises rotating said substrate.

6. The method of claim 4, wherein said exposing comprises exposing a radiation-sensitive material.

20. A semiconductor integrated circuit produced from a method claimed in claim 4.

21. A semiconductor integrated circuit produced from a method claimed in claim 5.

22. A semiconductor integrated circuit produced from a method claimed in claim 6.

9. A system for patterning a thin-film of radiation-sensitive material on a substrate for semiconductor manufacturing comprising:

a liquid immersion lithography system configured to expose said thin film to a pattern; and

a drying system coupled to said liquid immersion lithography system and configured to dry said thin film following exposure by substantially removing immersion fluid from said thin film.

10. The system of claim 9, further comprising a track system coupled to said liquid immersion lithography system and configured to coat said substrate with said thin film prior to said exposure, and develop said pattern in said thin film following said exposure, wherein said drying system is coupled to at least one of said liquid immersion system and said track system.

11. The system of claim 10, wherein said liquid immersion lithography system comprises at least one of a radiation source, an imaging system, a scanning system, a projection lens system, and a substrate holder.

12. The system of claim 10, wherein said drying system is configured to substantially remove water.

13. The system of claim 10, wherein said track system comprises at least one of a coating system, and a developing unit.

14. The system of claim 10, wherein said drying system facilitates drying said substrate to remove immersion fluid from said substrate following said exposure in said liquid immersion lithography system.

15. The system of claim 10, wherein said drying system is configured to rotate said substrate.

16. The system of claim 10, wherein said system is configured to pattern a photoresist.