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METHOD AND STRUCTURE FOR GENERATING OFFSET FIELDS FOR USE IN MRAM DEVICES

  • US 20060154381A1
  • Filed: 01/10/2005
  • Published: 07/13/2006
  • Est. Priority Date: 01/10/2005
  • Status: Active Grant
First Claim
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1. A method for generating an offset field for a magnetic random access memory (MRAM) device, the method comprising:

  • forming a first pinned layer integrally with a wordline;

    forming a second pinned layer integrally with a bitline;

    disposing an MRAM cell between said wordline and said bitline, said MRAM cell including a reference layer, an antiparallel free layer, and a tunnel barrier therebetween;

    wherein said first pinned layer is formed with an internal magnetization in a manner so as to create a first external field generally perpendicular to a long axis of said wordline, and said second pinned layer is formed with an internal magnetization in a manner so as to create a second external field generally perpendicular to a long axis of said bitline.

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