Light emitting diodes (LEDs) with improved light extraction by roughening
First Claim
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1-1. The method of claim 15, wherein the n-GaN up LED wafer has a surface roughness of less than 5000 angstrom before said roughening.
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Abstract
Systems and methods are disclosed for fabricating a semiconductor light emitting diode (LED) device by forming an n-gallium nitride (n-GaN) layer on the LED device; and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
70 Citations
20 Claims
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1-1. The method of claim 15, wherein the n-GaN up LED wafer has a surface roughness of less than 5000 angstrom before said roughening.
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8. The method of claim 45, wherein the alkaline solution comprises one or the mixture of KOH, NaOH, and NH4OH.
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14. A method of roughening an exposed n-GaN of an n-side up LED wafer having a conductive substrate, the method comprising:
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depositing an n-GaN portion above the conductive substrate;
depositing active layers above the n-GaN portion;
depositing a p-GaN portion above the active layers;
depositing one or more first metal layers;
applying a masking layer;
etching the first metal layers, the p-GaN portion, the active layers, and the n-GaN portion;
removing the masking layer;
depositing a passivation layer;
removing a portion of the passivation layer on top of the p-GaN portion to expose the first metal layers;
depositing one or more second metal layers;
depositing a metal substrate;
removing the carrier substrate to exposed the n-GaN portion;
roughening the n-GaN portion. - View Dependent Claims (1, 2, 3, 4, 5, 6, 7, 9, 10, 11, 12, 13, 15, 17, 18, 19, 20)
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Specification