Systems and methods for removing operating heat from a light emitting diode

• US 20060154393A1
• Filed: 01/11/2005
• Published: 07/13/2006
• Est. Priority Date: 01/11/2005
• Status: Abandoned Application

• Current Assignee: SemiLEDs Corporation (SemiLEDs Inc)
• Original Assignee: SemiLEDs Corporation (SemiLEDs Inc)
• Inventors: Tran, Chuong Anh, Doan, Trung Tri
• Application Number:
  US11/032,855
• Publication Number:
  US 20060154393A1
• Time in Patent Office: Days
• US Class Current: 438/26
• CPC Class Codes: H01L 25/0753 the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/641 characterized by the materials
• CPC Class Codes: H01L 33/642 characterized by the shape

Abstract

Systems and methods for fabricating a light emitting diode include forming a multilayer epitaxial structure above a carrier substrate; depositing at least one metal layer above the multilayer epitaxial structure and forming heat removal fins thereon; removing the carrier substrate.

Claims

1. A method for cooling a light emitting diode, comprising:

forming a multilayer epitaxial structure above a carrier substrate;

depositing at least one metal layer above the multilayer epitaxial structure;

removing the carrier substrate; and

forming one or more heat removal structures in the metal layer to dissipate heat.

2. The method of claim 1, wherein the carrier substrate comprises sapphire.

3. The method of claim 1, wherein the depositing metal layer comprises electro chemical deposition.

4. The method of claim 1, wherein the depositing metal layer comprises depositing at least a metal layer followed by one or more electroless chemical depositions.

5. The method of claim 1, wherein depositing metal layer comprising applying using one of:

CVD, PECVD, PVD, ALD, MOCVD, evaporation, and plasma spray.

6. The method of claim 1, comprising depositing one or more additional metal layers above the metal layer.

7. The method of claim 1, wherein the heat removal structures comprises roughening.

8. The method of claim 7, wherein the surface roughening comprises applying using one of:

sand blasting, grinding, scribing, laser cutting.

9. The method of claim 1, wherein the heat removal structures comprises having a effective surface area greater than approximately 1.1.

19. The method of claim 7, wherein the carrier substrate comprises one of:

sapphire, silicon carbide, silicon, gallium arsenide.

20. The method of claim 7, wherein the multi layer epitaxial structure comprises a n-type GaN or AlGaN layer,

one or more quantum wells with InAlGaN/GaN layers, and

a p-type GaN, AlGaN layer.

21. The method of claim 7, wherein the one or more metal layers above the multi layer epitaxial structure comprises one of:

Indium Tin Oxide (ITO), Silver, Al, Cr Ni, Au, Mo, W, a refractory metal, a metal alloy.

22. The method of claim 7, comprising an optional doped semiconductor layer between the multi layer epitaxial structure and the metal layers.

23. The method of claim 7, wherein a mesa comprises one of:

a polymer, a hard mask.

24. The method of claim 7, wherein the non-conductive layer comprises one of:

SiO₂, Si₃N₄, a diamond like film, a non-conducting metal oxide element, a ceramic element.

25. The method of claim 7, comprising removing a portion of the non conductive layer.

26. The method of claim 7, wherein removing the portion comprises one of:

lifting off, wet etching, dry etching to expose a conductor layer.

29. The method of claim 7, wherein depositing one or more metal layers comprises one of:

sputtering, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), evaporation-ion beam deposition, electro deposition, electroless deposition, plasma spray, ink jet deposition.

30. The method of claim 7, comprising depositing one or more metal layers using one of:

PVD, evaporation-ion beam deposition, CVD, e-beam deposition.

31. The method of claim 19, wherein one metal layer includes one of:

chromium (Cr), nickel (Ni), tantalum nitride copper (TaN/Cu), molybdenum (Mo), tungsten (W), a metal alloy.

10. A method for cooling a light emitting diode, comprising:

forming a multilayer epitaxial structure above a carrier substrate;

depositing at least one metal layer above the multilayer epitaxial structure;

removing the carrier substrate; and

attaching one or more heat removal structures to the metal layer to dissipate heat.

11. The method of claim 10, wherein the carrier substrate comprises sapphire.

12. The method of claim 10, wherein the depositing metal layer comprises electro chemical deposition.

13. The method of claim 10, wherein the depositing metal layer comprises depositing at least a metal layer followed by one or more electroless chemical depositions.

14. The method of claim 10, wherein depositing metal layer comprising applying using one of:

CVD, PECVD, PVD, ALD, MOCVD, evaporation, and plasma spray.

15. The method of claim 10, comprising depositing one or more additional metal layers above the metal layer.

16. The method of claim 10, wherein the heat removal structures comprises attaching to the metal substrate using one of:

gluing, bonding using paste such as silver paste.

17. The method of claim 10, wherein the heat removal structures comprises having a effective surface area greater than approximately 1.1.

27. The method of claim 15, wherein the conductor layer comprises one or more metal layers.

28. The method of claim 15, whereas the conductor layer is deposited on top of a passivation layer, wherein the passivation layer comprises one or more non-conductive layers.

18. A method for fabricating a light emitting diode, comprising:

providing a carrier substrate;

depositing a multilayer epitaxial structure;

depositing one or more metal layers above the multilayer epitaxial structure;

defining one or more mesas using etching;

forming one or more non conductive layers;

removing a portion of the non conductive layers;

depositing at least one or more metal layers and forming one or more heat dissipating fins in the metal layers; and

removing the carrier substrate.