Substrate processing apparatus using a batch processing chamber

• US 20060156979A1
• Filed: 11/22/2005
• Published: 07/20/2006
• Est. Priority Date: 11/22/2004
• Status: Abandoned Application

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Webb, Aaron, Shah, Vinay K., Yudovsky, Joseph, Merry, Nir, Thakur, Randhir, Hegedus, Andreas G., Brailove, Adam Alexander, Ghanayem, Steve G.
• Application Number:
  US11/286,063
• Publication Number:
  US 20060156979A1
• Time in Patent Office: Days
• US Class Current: 118/715
• CPC Class Codes: C23C 16/4412 Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
• CPC Class Codes: C23C 16/45546 specially adapted for a substrate stack in the ALD reactor
• CPC Class Codes: C23C 16/45593 Recirculation of reactive gases
• CPC Class Codes: C23C 16/4584 the substrate being rotated
• CPC Class Codes: C23C 16/481 by radiant heating of the substrate
• CPC Class Codes: C23C 16/54 Apparatus specially adapted for continuous coating
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67109 mainly by convection
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67167 surrounding a central transfer chamber
• CPC Class Codes: H01L 21/6719 characterized by the construction of the processing chambers, e.g. modular processing chambers
• CPC Class Codes: H01L 21/67207 comprising a chamber adapted to a particular process
• CPC Class Codes: H01L 21/67745 characterized by movements or sequence of movements of transfer devices
• CPC Class Codes: H01L 21/67757 vertical transfer of a batch of workpieces
• CPC Class Codes: H01L 21/67781 Batch transfer of wafers

Abstract

Aspects of the invention include a method and apparatus for processing a substrate using a multi-chamber processing system (e.g., a cluster tool) adapted to process substrates in one or more batch and/or single substrate processing chambers to increase the system throughput. In one embodiment, a system is configured to perform a substrate processing sequence that contains batch processing chambers only, or batch and single substrate processing chambers, to optimize throughput and minimize processing defects due to exposure to a contaminating environment. In one embodiment, a batch processing chamber is used to increase the system throughput by performing a process recipe step that is disproportionately long compared to other process recipe steps in the substrate processing sequence that are performed on the cluster tool. In another embodiment, two or more batch chambers are used to process multiple substrates using one or more of the disproportionately long processing steps in a processing sequence. Aspects of the invention also include an apparatus and method for delivering a precursor to a processing chamber so that a repeatable ALD or CVD deposition process can be performed.

Claims

1. A substrate processing apparatus comprising:

a factory interface having a transfer region that is generally maintained at atmospheric pressure;

a cool plate that is adapted to heat and/or cool a substrate;

a batch capable substrate processing chamber that is in communication with the transfer region of the factory interface; and

a transfer robot positioned in the transfer region that is adapted to transfer one or more substrates between the cool plate and the batch capable substrate processing chamber.

2. The apparatus of claim 1, wherein the factory interface further comprises a filtration unit that is adapted to provide filtered air to the transfer region.

3. The apparatus of claim 1, further comprising a pod that is adapted to contain two or more substrates, wherein the transfer robot is further adapted to access the substrates positioned in the pod.

4. The apparatus of claim 1, further comprising a second batch capable substrate processing chamber that is in communication with the transfer region of the factory interface.

5. The apparatus of claim 1, further comprising a substrate processing chamber that is in communication with the transfer region of the factory interface, wherein the second substrate processing chamber is a decoupled plasma nitride (DPN), an rapid thermal processing (RTP), a chemical vapor deposition (CVD), an atomic layer deposition (ALD), a physical vapor deposition (PVD), or a metrology chamber.

6. The apparatus of claim 1, wherein the batch capable substrate processing chamber is adapted to perform a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process on a substrate.

7. A substrate processing apparatus comprising:

a factory interface having a transfer region that is generally maintained at atmospheric pressure;

a cool plate that is adapted to heat and/or cool a substrate;

a batch capable substrate processing chamber assembly that is in communication with the transfer region of the factory interface, wherein the batch capable substrate processing chamber assembly comprises;

a substrate processing region having one or more walls that form an internal process volume;

a substrate buffer region having one or more walls that form an internal buffer volume, wherein the substrate buffer region is positioned adjacent to the substrate processing region; and

a process cassette that is adapted to support two or more substrates, wherein the process cassette is transferable between the internal buffer volume and the internal process volume by use of a lift mechanism; and

a transfer robot positioned in the transfer region that is adapted to transfer one or more substrates between the cool plate and the process cassette.

8. The apparatus of claim 7, wherein the substrate processing region is positioned above the substrate buffer region.

9. The apparatus of claim 7, further comprising:

a pod that is adapted to contain two or more substrates;

a second robot that is adapted to transfer one of the two or more substrates positioned in the pod between the cool plate and the pod.

10. The apparatus of claim 7, further comprising:

a slit valve that is sealably positioned between the transfer region and the internal buffer volume of the substrate buffer region and is adapted to fluidly isolate the internal buffer volume from the transfer region; and

a vacuum pump that is in fluid communication with the buffer region, wherein the vacuum pump is adapted to reduce the pressure in the substrate buffer region to a pressure below atmospheric pressure.

11. The apparatus of claim 7, further comprising a gas delivery system that is in fluid communication with the internal process volume of the batch capable substrate processing chamber assembly, wherein the gas delivery system is adapted to deliver a precursor containing gas to the internal process volume so that a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process can be performed on one or more substrates positioned therein.

12. The apparatus of claim 7, wherein the transfer robot has a plurality of robot blades that are adapted to simultaneously transfer substrates between the cool plate and the process cassette.

13. The apparatus of claim 7, wherein the batch capable substrate processing chamber assembly further comprises a shutter positioned between the substrate processing region and the substrate buffer region, wherein the shutter is adapted to be sealably positioned to isolate the internal process volume from the internal buffer volume;

14. A substrate processing apparatus comprising:

a factory interface having a transfer region that is generally maintained at atmospheric pressure;

a pod that is adapted to contain two or more substrates, wherein the pod is communication with the transfer region of the factory interface;

a first batch capable substrate processing chamber assembly that is in communication with the transfer region of the factory interface, wherein the first batch capable substrate processing chamber assembly comprises;

a first substrate processing region having one or more walls that form a first internal process volume;

a first transfer region having one or more walls that form a first internal buffer volume, wherein the first transfer region is positioned adjacent to the first substrate processing region; and

a first process cassette that is adapted to support two or more substrates, wherein the first process cassette is transferable between the first internal buffer volume and the first internal process volume by use of a lift mechanism;

a second batch capable substrate processing chamber assembly that is in communication with the transfer region of the factory interface, wherein the second batch capable substrate processing chamber assembly comprises;

a second substrate processing region having one or more walls that form a second internal process volume;

a second transfer region having one or more walls that form a second internal buffer volume, wherein the second transfer region is positioned adjacent to the second substrate processing region; and

a second process cassette that is adapted to support two or more substrates, wherein the second process cassette is transferable between the second internal buffer volume and the second internal process volume by use of a lift mechanism;

a vacuum pump that is adapted to reduce the pressure in at least one region selected from a group consisting of the first internal process volume, the second internal process volume, the first internal buffer volume, and the second internal buffer volume; and

a transfer robot positioned in the transfer region that is adapted to transfer one or more substrates between the pod and the first process cassette or second process cassette.

15. The apparatus of claim 14, further comprising a plurality of gas delivery systems where at least one gas delivery system is in fluid communication with the internal process volume of the first and second batch capable substrate processing chamber assemblies, wherein each gas delivery system is adapted to deliver a precursor containing gas to the internal process volume so that a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process can be performed on one or more substrates positioned therein.

16. The apparatus of claim 14, wherein the factory interface further comprises a filtration unit that is adapted to provide filtered air to the transferring region.

17. The apparatus of claim 14, wherein the first batch capable substrate processing chamber assembly and the second batch capable substrate processing chamber assembly both further comprise a shutter positioned between the substrate processing region and the substrate buffer region, wherein the shutter is adapted to be sealably positioned to isolate the internal process volume from the internal buffer volume;

18. The apparatus of claim 14, wherein the substrate processing region is positioned above the substrate buffer region.

19. A substrate processing apparatus comprising:

a factory interface system having a transfer region that is generally maintained at atmospheric pressure;

two or more batch capable substrate processing chambers that are each in communication with the transfer region, wherein the two or more batch capable substrate processing chambers comprise;

a substrate processing region having one or more walls that form an internal process volume;

a substrate buffer region having one or more walls that form an internal buffer volume, wherein the substrate buffer region is positioned vertically adjacent to the substrate processing region;

a process cassette that is adapted to support two or more substrates, wherein the process cassette is transferable between the internal buffer volume and the internal process volume by use of a lift mechanism; and

a shutter positioned between the substrate processing region and the substrate buffer region, wherein the shutter is adapted to be sealably positioned to isolate the internal process volume from the internal buffer volume;

a cool down plate positioned in the transfer region of the factory interface; and

a robot mounted in the transfer chamber that is adapted to transfer substrates between the cool down plate and the two or more batch substrate processing chambers.

20. The apparatus of claim 19, further comprising a plurality of gas delivery systems where at least one gas delivery system is in fluid communication with the internal process volume of each of the two or more batch capable substrate processing chambers, wherein each gas delivery system is adapted to deliver a precursor containing gas to the internal process volume so that a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process can be performed on one or more substrates positioned therein.

21. The apparatus of claim 19, wherein the factory interface further comprises a filtration unit that is adapted to provide filtered air to the transferring region.

22. A substrate processing apparatus comprising:

a factory interface having a transfer region that is generally maintained at atmospheric pressure;

a pod that is adapted to contain two or more substrates, wherein the pod is communication with the transfer region of the factory interface;

a batch capable substrate processing chamber assembly that is in communication with the transfer region of the factory interface, wherein the batch capable substrate processing chamber assembly comprise;

a substrate processing region having one or more walls that form an internal process volume;

a substrate buffer region having one or more walls that form an internal buffer volume, wherein the substrate buffer region is positioned adjacent to the substrate processing region;

a process cassette that is adapted to support two or more substrates; and

a lift mechanism that is adapted to transfer the process cassette between the internal buffer volume and the internal process volume;

a first buffer chamber comprising;

a first cool plate that is adapted to heat and/or cool a substrate; and

a first robot that is adapted to transfer one or more substrates between the first cool plate and the process cassette;

a single substrate processing chamber that is in communication with the transfer region, wherein the single substrate processing chamber has one or more walls that form a single substrate internal process volume;

a second buffer chamber comprising;

a second cool plate that is adapted to heat and/or cool a substrate; and

a second robot that is adapted to transfer one or more substrates between the second cool plate and the single substrate processing chamber; and

a third robot that is positioned in the transfer region and is adapted to transfer one or more substrates between the first buffer chamber, the second buffer chamber, and the pod.

23. The apparatus of claim 22, wherein the single substrate processing chamber is a decoupled plasma nitride (DPN), an rapid thermal processing (RTP), a chemical vapor deposition (CVD), an atomic layer deposition (ALD), a physical vapor deposition (PVD), or a metrology chamber.

24. The apparatus of claim 22, further comprising a gas delivery system that is in fluid communication with the internal process volume of the batch capable substrate processing chamber assembly, wherein the gas delivery system is adapted to deliver a precursor containing gas to the internal process volume so that a chemical vapor deposition (CVD) or an atomic layer deposition (ALD) process can be performed on one or more substrates positioned therein.

25. The apparatus of claim 22, wherein the factory interface further comprises a filtration unit that is adapted to provide filtered air to the transferring region.