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Light emitting device

  • US 20060157717A1
  • Filed: 12/20/2005
  • Published: 07/20/2006
  • Est. Priority Date: 12/20/2004
  • Status: Active Grant
First Claim
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1. A light emitting device, comprising:

  • a nitride semiconductor substrate and, on a first main surface of said nitride semiconductor substrate, an n-type nitride semiconductor layer, a p-type nitride semiconductor layer positioned further than said n-type nitride semiconductor layer viewed from said nitride semiconductor substrate, and a light generating layer positioned between said n-type nitride semiconductor layer and said p-type nitride semiconductor layer;

    wherein specific resistance of said nitride semiconductor substrate is at most 0.5 Ω

    ·

    cm;

    the side of said p-type nitride semiconductor layer is mounted face-down and the light is emitted from the second main surface that is opposite to the first main surface of said nitride semiconductor substrate; and

    a trench is formed in the second main surface of said nitride semiconductor substrate.

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