Semiconductor light emitting diode having textured structure and method of manufacturing the same
First Claim
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1. A method of manufacturing a semiconductor light emitting diode, comprising:
- forming a first semiconductor layer on a substrate;
forming a textured structure first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and
forming a second semiconductor layer on the first semiconductor layer.
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Abstract
A semiconductor light emitting diode having a textured structure and a method of manufacturing the semiconductor light emitting diode are provided. The method includes forming a first semiconductor layer on a substrate; forming a textured structured first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and forming a second semiconductor layer on the first semiconductor layer.
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14 Claims
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1. A method of manufacturing a semiconductor light emitting diode, comprising:
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forming a first semiconductor layer on a substrate;
forming a textured structure first semiconductor layer by penetrating a material of a material layer into the first semiconductor layer after the material layer is formed on the first semiconductor layer and is annealed; and
forming a second semiconductor layer on the first semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor light emitting diode comprising:
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a first semiconductor layer formed in a textured structure;
a material region which is formed between the textured structures of the first semiconductor layer and includes at least one metal selected from Ni, Pd, Au, and Ag; and
a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer. - View Dependent Claims (13, 14)
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Specification