Systems and methods for producing white-light light emitting diodes
First Claim
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7-1. The LED of claim 1, wherein the phosphor layer is patterned.
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Abstract
A vertical light emitting diode (LED) includes a metal substrate; a p-electrode coupled to the metal substrate; a p-contact coupled to the p-electrode; a p-GaN portion coupled to the p electrode; an active region coupled to the p-GaN portion; an n-GaN portion coupled to the active region; and a phosphor layer coupled to the n-GaN.
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Citations
20 Claims
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7-1. The LED of claim 1, wherein the phosphor layer is patterned.
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11. A method for fabricating phosphor n-GaN up LED wafer, comprising:
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providing a carrier substrate;
depositing a n-GaN portion above the carrier substrate;
depositing active layers above the n-GaN portion;
depositing a p-GaN portion above the active layers;
depositing one or more metal layers applying a masking layer;
etching the metal, p-GaN layer, active layers and n-GaN layer, removing the masking layer;
depositing a passivation layer;
removing portion of the passivation layer on top of the p-GaN to expose the metal, depositing one or more layers, depositing a metal substrate, removing the carrier substrate to expose the n-GaN surface applying a phosphor layer above the n-GaN surface. - View Dependent Claims (2, 12, 13, 14, 15, 16, 17, 18, 20)
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20-2. The method of claim 11, wherein the phosphor layer applied at the wafer level is coupled to n-GaN surface of the n-side up vertical LED.
Specification