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Semiconductor device having etch-resistant L-shaped spacer and fabrication method thereof

  • US 20060157750A1
  • Filed: 06/30/2005
  • Published: 07/20/2006
  • Est. Priority Date: 01/20/2005
  • Status: Abandoned Application
First Claim
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1. A semiconductor device comprising:

  • a semiconductor substrate;

    a gate insulating layer formed on the semiconductor substrate;

    a gate electrode formed on the gate insulating layer;

    an L-shaped lower spacer conformally formed on sidewalls of the gate electrode and a portion of the substrate;

    an etch-resistant L-shaped spacer conformally formed on the L-shaped lower spacer;

    low-concentration source/drain regions aligned to sides of the sidewall portions of the L-shaped lower spacer and formed within the substrate; and

    high-concentration source/drain regions aligned to sides of bottom portions of the etch-resistant L-shaped spacer and formed within the substrate.

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