Substrate having silicon germanium material and stressed silicon nitride layer
First Claim
1. A method of fabricating a semiconductor device, the method comprising:
- (a) forming a doped silicon region on a substrate;
(b) forming on the substrate, a silicon germanium material adjacent to the doped silicon region to induce a stress in the doped silicon region; and
(c) forming on the substrate, a stressed silicon nitride layer over at least a portion of the doped silicon region to further stress the doped silicon region.
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Accused Products
Abstract
A method of fabricating a semiconductor device includes providing a region having doped silicon region on a substrate, and forming a silicon germanium material adjacent to the region on the substrate. A stressed silicon nitride layer is formed over at least a portion of the doped silicon region on the substrate. The silicon germanium layer and stressed silicon nitride layer induce a stress in the doped silicon region of the substrate. In one version, the semiconductor device has a transistor with source and drain regions having the silicon germanium material, and the doped silicon region forms a channel that is configured to conduct charge between the source and drain regions. The stressed silicon nitride layer is formed over at least a portion of the channel, and can be a tensile or compressively stressed layer according the desired device characteristics.
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Citations
28 Claims
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1. A method of fabricating a semiconductor device, the method comprising:
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(a) forming a doped silicon region on a substrate;
(b) forming on the substrate, a silicon germanium material adjacent to the doped silicon region to induce a stress in the doped silicon region; and
(c) forming on the substrate, a stressed silicon nitride layer over at least a portion of the doped silicon region to further stress the doped silicon region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 18)
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11. A method of fabricating a semiconductor device, the method comprising:
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(a) forming a transistor on a substrate by;
(i) forming a source region and a drain region on the substrate, each of the source and drain regions comprising silicon germanium material; and
(ii) forming a channel region configured to conduct charge between the source region and drain region, the channel region comprising doped silicon, whereby stress is induced in the channel region by the silicon germanium material in the source and drain regions; and
(b) forming a stressed silicon nitride layer over at least a portion of the transistor, the stressed silicon nitride layer being capable of inducing stress in the channel region, whereby the silicon germanium material and the overlying stressed silicon nitride layer induce stress in the channel region that increases the carrier mobility of channel region. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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19. A semiconductor device comprising:
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(a) a transistor comprising;
(i) source and drain regions comprising silicon germanium material; and
(ii) a channel region configured to conduct charge between the source and drain regions, the channel region comprising doped silicon, whereby stress is induced in the channel region by the silicon germanium material; and
(b) a stressed silicon nitride layer over at least a portion of the transistor, the stressed silicon nitride layer being capable of inducing stress in the channel region, whereby the silicon germanium material and the overlying stressed silicon nitride layer induce stress in the channel region that increase the carrier mobility of the channel region. - View Dependent Claims (20, 21, 22, 23, 24, 25, 26)
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27. A method of fabricating a semiconductor device, the method comprising:
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(a) forming a transistor on a substrate by;
(i) forming a source region and a drain region on the substrate, each of the source and drain regions comprising silicon germanium material; and
(ii) forming a channel region configured to conduct charge between the source region and drain region, the channel region comprising germanium, whereby stress is induced in the channel region by the silicon germanium material in the source and drain regions; and
(b) forming a stressed silicon nitride layer over at least a portion of the transistor, the stressed silicon nitride layer being capable of inducing stress in the channel region, whereby the silicon germanium material and the overlying stressed silicon nitride layer induce stress in the channel region that increases the carrier mobility of channel region.
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28. A semiconductor device comprising:
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(a) a transistor comprising;
(i) source and drain regions comprising silicon germanium material; and
(ii) a channel region configured to conduct charge between the source and drain regions, the channel region comprising germanium, whereby stress is induced in the channel region by the silicon germanium material; and
(b) a stressed silicon nitride layer over at least a portion of the transistor, the stressed silicon nitride layer being capable of inducing stress in the channel region, whereby the silicon germanium material and the overlying stressed silicon nitride layer induce stress in the channel region that increase the carrier mobility of the channel region.
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Specification