Method of forming interconnection in semiconductor device

• US 20060160352A1
• Filed: 12/02/2005
• Published: 07/20/2006
• Est. Priority Date: 12/09/2004
• Status: Active Grant

• Current Assignee: ASM Japan K.K. (ASM International NV)
• Original Assignee: ASM Japan K.K. (ASM International NV)
• Inventors: Kemeling, Nathan R.C., Matsushita, Kiyohiro, Ohara, Naoki
• Granted Patent: US 7,354,852 B2
• Time in Patent Office: Days
• US Class Current: 438/622
• CPC Class Codes: H01L 21/76801 characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/76825 by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc. plasma treatment H01L21/76826

Abstract

A multilayer interconnection structure is formed by a method comprising the steps of: Forming a low dielectric constant film on a substrate, curing the low dielectric constant film by irradiating it with UV light, laminating a UV blocking film, laminating a next low dielectric constant film, and curing the next low dielectric constant film by irradiating it with UV light.

Claims

1. A method of forming a multilayer interconnection structure, which comprises the steps of:

forming a low dielectric constant film on a substrate;

irradiating the low dielectric constant film with UV light, thereby curing it;

laminating a UV blocking film;

laminating a next low dielectric constant film; and

irradiating the next low dielectric constant film with UV light, thereby curing it.

2. The method according to claim 1, wherein said UV blocking film has an extinction coefficient of approximately 0.2 or more at a wavelength of UV light irradiated.

3. The method according to claim 1, wherein said UV blocking film is formed with a thickness enough to absorb approximately 50% or more of UV light irradiated.

4. The method according to claim 3, wherein a thickness of said UV blocking film is from approximately 10 nm to approximately 100 nm.

5. The method according to claim 2, wherein said UV blocking film is formed using a material selected from a group consisting of SiC, SiCN, SiCO, and SiN.

6. The method according to claim 1, wherein a wavelength of said UV light is approximately 200 nm or less.

7. The method according to claim 1, which further comprises a step of etching the next low dielectric constant film and the UV blocking film after curing said next low dielectric constant film by irradiating it with UV light.

8. The method according to claim 1, wherein said UV blocking film is used as an etch stopper film.

9. The method according to claim 1, wherein curing of said low dielectric constant film and said next low dielectric constant film is performed with a UV light wavelength of approximately 100 nm to approximately 400 nm, irradiation intensity of approximately 1 mW/cm2 to approximately 1,000 mW/cm2 and irradiation time of approximately 5 sec. to approximately 300 sec.

10. The method according to claim 1, wherein curing of said low dielectric constant film and said next low dielectric constant film is performed at a substrate temperature of approximately 50°

C. to approximately 600°

C.

11. The method according to claim 1, wherein said curing of said low dielectric constant film and said next low dielectric constant film is performed in an atmosphere of Ar, He, CO2 or N2.

12. The method according to claim 1, wherein on the substrate on which said low dielectric constant film is formed, a wiring layer and a passivation protective film have been formed.

13. The method according to claim 1, wherein said UV blocking film is laminated after said low dielectric constant film is cured, a hardmask layer is formed, patterning is performed, etching is performed, a via or a via/trench is formed, and a CMP process is performed.

14. A method of forming a multilayer interconnection structure, which comprises the steps of:

selecting UV light for curing a low dielectric constant film;

selecting a material which absorbs a wavelength of the UV light;

forming the low dielectric constant film on a substrate;

irradiating the low dielectric constant film with the selected UV light, thereby curing it;

laminating a UV blocking film using the selected material which absorbs a wavelength of the UV light;

laminating a next low dielectric constant film; and

irradiating the next low dielectric constant film with the UV light, thereby curing it.

15. The method according to claim 14, wherein in said step of selecting a material which absorbs a wavelength of said UV light, an extinction coefficient at a wavelength used and etching selectivity to a low-k film are used as indicators.

16. The method according to claim 15, wherein said extinction coefficient is 0.2 or more at a wavelength of approximately 200 nm and etching selectivity to a low-k film is 5:

1 to 20;

1, which are used as indicators.

17. The method according to claim 14, wherein in said step of selecting a material which absorbs a wavelength of said UV light, an IV characteristic of 1E-8A/cm2 or less at 1 MV/cm is further used as an indicator.

18. A method of forming a multilayer interconnection structure, which comprises the steps of:

forming a first low dielectric constant film having a first film thickness on a substrate;

irradiating the low dielectric constant film with UV light, thereby curing it to change it to a hardened first low dielectric constant film having a second film thickness;

laminating a UV blocking film;

laminating a second low dielectric constant film having a first film thickness;

and

irradiating the second low dielectric constant film with UV light, thereby curing it to change it to a hardened second low dielectric constant film having a second film thickness and simultaneously curing the hardened first low dielectric constant to change its thickness to a third film thickness, wherein a rate of change from the second film thickness of the first low dielectric constant film to the third film thickness is approximately 30% or less of a rate of change from the first film thickness to the second film thickness.

19. The method according to claim 18, wherein said UV blocking film is an etch stopper film.