Semiconductor device, liquid crystal device, electronic apparatus, and method of manufacturing semiconductor device

• US 20060163583A1
• Filed: 12/08/2005
• Published: 07/27/2006
• Est. Priority Date: 01/21/2005
• Status: Active Grant

• Current Assignee: 138 East LCD Advancements Limited (Vector Capital Corporation)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Jiroku, Hiroaki
• Granted Patent: US 7,804,096 B2
• Time in Patent Office: Days
• US Class Current: 257/66
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78633 with a light shield

Abstract

A semiconductor device includes: a substrate; a plurality of island-shaped light shielding films formed on the substrate; a first insulating film formed between the plurality of light shielding films; a second insulating film formed on the first insulating film and the plurality of light shielding films; and semiconductor elements each having a semiconductor film. The step difference is not generated between an interface between the first insulating film and the second insulating film and an interface between each of the plurality of light shielding films and the second insulating film. Each of the plurality of light shielding films is disposed between each of the semiconductor films and the substrate.

Claims

1. A semiconductor device comprising:

a substrate;

a plurality of island-shaped light shielding films formed on the substrate;

a first insulating film formed between the plurality of light shielding films;

a second insulating film formed on the first insulating film and the plurality of light shielding films; and

semiconductor elements each having a semiconductor film,

wherein a step difference is not generated between an interface between the first insulating film and the second insulating film and an interface between each of the plurality of light shielding films and the second insulating film, and

each of the plurality of light shielding films is disposed between each of the semiconductor films and the substrate.

2. The semiconductor device according to claim 1,

wherein the first insulating film is in contact with the substrate.

3. The semiconductor device according to claim 1,

wherein each of the plurality of light shielding films absorbs or reflects at least a part of light that is incident on the semiconductor film through the substrate.

4. The semiconductor device according to claim 1,

wherein each of the plurality of light shielding films is formed so as to cover the entire semiconductor film.

5. The semiconductor device according to claim 1,

wherein each of the plurality of light shielding films is formed so as to cover at least a channel forming region of the semiconductor film.

6. A liquid crystal device comprising the semiconductor device according to claim 1.

7. An electronic apparatus comprising the semiconductor device according to claim 1.

8. A method of manufacturing a semiconductor device, comprising:

forming a plurality of island-shaped light shielding films on a substrate, by forming a light shielding film on the substrate, then forming a plurality of island-shaped etching masks on the corresponding light shielding films, respectively, and then etching the corresponding light shielding films until a corresponding surface of the substrate is exposed through the corresponding etching masks;

forming a first insulating film on the exposed surface of the substrate and the etching masks;

removing the etching masks;

forming a second insulating film on the plurality of light shielding films and the first insulating film; and

forming semiconductor elements above the light shielding films with the second insulating film interposed therebetween.

10. The method according to claim 8, further comprising:

planarizing surfaces of the first insulating film and the light shielding films before forming the second insulating film.

11. The method according to claim 8,

wherein the forming of the semiconductor elements on the light shielding films includes:

forming a semiconductor film above each of the light shielding films; and

modifying the semiconductor film by a thermal process.

12. The method according to claim 11,

wherein, when the semiconductor film is modified, the semiconductor film is melted and crystallized by the thermal process.

13. The method according to claim 11,

wherein the thermal process is performed by irradiating a laser beam onto the semiconductor film.

9. A method of manufacturing a semiconductor device, comprising:

forming a first insulating film on a substrate;

forming an etching mask on the first insulating film, the etching mask having a plurality of island-shaped openings;

forming a plurality of grooves by etching the first insulating film through the etching mask;

forming a plurality of light shielding films on the plurality of island-shaped grooves and removing the etching mask;

forming a second insulating film on the plurality of light shielding films and the first insulating film; and

forming semiconductor elements above the light shielding films with the second insulating film interposed therebetween.