Light emitting diode and fabricating method thereof

• US 20060163592A1
• Filed: 04/19/2005
• Published: 07/27/2006
• Est. Priority Date: 01/21/2005
• Status: Active Grant

• Current Assignee: Epistar Corporation (Ennostar, Inc.)
• Original Assignee: United Epitaxy Company, Ltd. (Ennostar, Inc.)
• Inventors: Tsai, Tzong-Liang, Chang, Chih-Sung, Chiang, Chang-Han, Wen, Way-Jze
• Granted Patent: US 7,768,022 B2
• Time in Patent Office: Days
• US Class Current: 257/94
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating

Abstract

A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.

Claims

1. A method of fabricating a light emitting diode, comprising:

providing a substrate;

forming a light emitting diode epitaxy structure on the substrate;

etching the light emitting diode epitaxy structure to form a recess;

forming a transparent dielectric layer in the recess;

bonding a conductive substrate to the light emitting diode epitaxy structure; and

removing the substrate.

2. The method of claim 1, wherein the transparent dielectric layer comprises a material selected from a group consisting of SiO₂, Si₃N₄, bisbenzocyclobutene and polyimide.

3. The method of claim 1, further comprising forming an adhesive layer on the conductive substrate for bonding the conductive substrate to the light emitting diode epitaxy structure.

4. The method of claim 3, wherein the adhesive layer comprises a material selected from a group consisting of Au, Sn, In, Ag, Ge, Cu, Pb and an alloy thereof.

5. The method of claim 1, wherein the step of forming the light emitting diode epitaxy structure comprises:

forming a first doped semiconductor layer on the substrate;

forming an active layer on the first doped semiconductor layer; and

forming a second doped semiconductor layer on the active layer.

6. The method of claim 1, wherein the step of etching the light emitting diode epitaxy structure exposes the substrate.

7. A light emitting diode, comprising:

a conductive substrate;

a light emitting diode epitaxy structure on the conductive substrate; and

a transparent dielectric layer on at least one sidewall of the light emitting diode epitaxy structure.

8. The light emitting diode of claim 7, wherein the transparent dielectric layer comprises a material selected from a group consisting of SiO₂, Si₃N₄, bisbenzocyclobutene and polyimide.

9. The light emitting diode of claim 7 further comprising an adhesive layer interposed between the conductive substrate and the light emitting diode epitaxy structure.

10. The light emitting diode of claim 9, wherein the adhesive layer comprises a material selected from a group consisting of Au, Sn, In, Ag, Ge, Cu, Pb and an alloy thereof.

11. The light emitting diode of claim 7, wherein the light emitting diode epitaxy structure comprises:

a first doped semiconductor layer;

an active layer on the first doped semiconductor layer; and

a second doped semiconductor layer on the active layer.

12. The light emitting diode of claim 11, wherein the first doped semiconductor layer is the n-type semiconductor layer and the second doped semiconductor is the p-type semiconductor layer.