Lighting module and method the production thereof
First Claim
1. A light emitting semiconductor component with at least one thin-film light emitting diode chip which is applied on a chip carrier having electrical connecting conductors and has a first and a second electrical connection side and also an epitaxially fabricated semiconductor layer sequence, wherein the semiconductor layer sequence is arranged on a carrier and comprises:
- (a) an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region arranged between these two semiconductor layers;
(b) a reflective layer at a main area facing toward the carrier, which reflective layer reflects at least one part of the electromagnetic radiation generated in the semiconductor layer sequence back into the latter;
(c) at least one semiconductor layer with at least one micropatterned, rough area; and
(d) a coupling-out area essentially defined by a main area facing away from the reflective layer; and
wherein the coupling-out area of the thin-film light emitting diode chip is free of housing material such as potting or encapsulating material.
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Accused Products
Abstract
An illumination module with at least one thin-film light emitting diode chip which is applied on a chip carrier having electrical connecting conductors and has a first and a second electrical connection side and also an epitaxially fabricated semiconductor layer sequence. The semiconductor layer sequence has an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region arranged between these two semiconductor layers and is arranged on a carrier. Moreover, it has a reflective layer at a main area facing toward the carrier, which reflective layer reflects at least one part of the electromagnetic radiation generated in the semiconductor layer sequence back into the latter. The semiconductor layer sequence has at least one semiconductor layer with at least one micropatterned, rough area. The coupling-out area of the thin-film light emitting diode chip is essentially defined by a main area remote from the reflective layer and is free of housing material such as potting or encapsulating material.
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Citations
48 Claims
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1. A light emitting semiconductor component with at least one thin-film light emitting diode chip which is applied on a chip carrier having electrical connecting conductors and has a first and a second electrical connection side and also an epitaxially fabricated semiconductor layer sequence, wherein the semiconductor layer sequence is arranged on a carrier and comprises:
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(a) an n-conducting semiconductor layer, a p-conducting semiconductor layer and an electromagnetic radiation generating region arranged between these two semiconductor layers;
(b) a reflective layer at a main area facing toward the carrier, which reflective layer reflects at least one part of the electromagnetic radiation generated in the semiconductor layer sequence back into the latter;
(c) at least one semiconductor layer with at least one micropatterned, rough area; and
(d) a coupling-out area essentially defined by a main area facing away from the reflective layer; and
wherein the coupling-out area of the thin-film light emitting diode chip is free of housing material such as potting or encapsulating material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48)
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Specification