Light-emitting diode device and production method thereof
First Claim
1. A light-emitting diode device comprising:
- an AlGaInP active layer (6);
a positive-electrode-side cladding layer (7, 8) and a negative-electrode-side cladding layer (4, 5) which sandwich the active layer and have an energy band gap value greater than an energy band gap value of the active layer; and
a window layer (9) which is formed on the positive-electrode-side cladding layer and has an energy band gap value greater than that of the active layer;
wherein the positive-electrode-side cladding layer comprises an undoped AlInP layer (7) grown to have a thickness of 0.5 μ
m or more and kept in contact with the active layer, and an intermediate layer (8) doped to assume p-type conductivity, kept in contact with the window layer and having an intermediate energy band gap value between an energy band gap value of the undoped AlInP layer and that of the window layer.
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Abstract
A double hetero structure light-emitting diode device includes an active layer (6), a positive-electrode-side cladding layer, a negative-electrode-side cladding layer (4), a window layer (9) and an undoped AlInP layer. The positive-electrode-side cladding layer includes an undoped AlInP layer (7) grown to have a thickness of 0.5 μm and an intermediate layer (8) doped to assume p-type conductivity and having an intermediate energy band gap value between that of the undoped AlInP layer and that of the window layer. The window layer on the intermediate layer is a GaP layer grown at 730° C. or higher and at a growth rate of 7.8 μm/hour or more in the presence of Ze serving as a dopant. The negative-electrode-side cladding layer is provided with an undoped AlInP layer (5) having a thickness of 0.1 μm or more. With this configuration, there is provided a light-emitting diode device that enhances the crystallinity of a window layer, prevents generation of faults caused by a high-temperature process and attains high luminance at a wavelength falling within a yellow-green band.
43 Citations
40 Claims
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1. A light-emitting diode device comprising:
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an AlGaInP active layer (6);
a positive-electrode-side cladding layer (7, 8) and a negative-electrode-side cladding layer (4, 5) which sandwich the active layer and have an energy band gap value greater than an energy band gap value of the active layer; and
a window layer (9) which is formed on the positive-electrode-side cladding layer and has an energy band gap value greater than that of the active layer;
wherein the positive-electrode-side cladding layer comprises an undoped AlInP layer (7) grown to have a thickness of 0.5 μ
m or more and kept in contact with the active layer, and an intermediate layer (8) doped to assume p-type conductivity, kept in contact with the window layer and having an intermediate energy band gap value between an energy band gap value of the undoped AlInP layer and that of the window layer. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40)
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2. A light-emitting diode device comprising:
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an AlGaInP active layer (6);
a positive-electrode-side cladding layer (7, 8) and a negative-electrode-side cladding layer (4, 5) which sandwich the active layer and have an energy band gap value greater than an energy band gap value of the active layer; and
a window layer (9) which is formed on the positive-electrode-side cladding layer and has an energy band gap value greater than that of the active layer;
wherein the window layer is a GaP layer grown at 730°
C. or higher and at a growth rate of 7.8 μ
m/hour or more in the presence of Zn serving as a dopant. - View Dependent Claims (3)
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4. A light-emitting diode device comprising:
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an AlGaInP active layer (6);
a positive-electrode-side cladding layer (7, 8) and a negative-electrode-side cladding layer (4, 5) which sandwich the active layer and have an energy band gap value greater than an energy band gap value of the active layer; and
a window layer which is formed on the positive-electrode-side cladding layer and has an energy band gap value greater than that of the active layer;
wherein the negative-electrode-side cladding layer comprises an undoped AlInP layer (5) kept in contact with the active layer and having a thickness of 0.1 μ
m or more. - View Dependent Claims (5)
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6. A method for producing a light-emitting diode device comprising the steps of:
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depositing a buffer layer (2) on a gallium arsenide substrate (1);
providing an n-type reflection layer (3) on the buffer layer;
depositing a silicon-doped n-type cladding layer (4) on the reflection layer;
providing a first undoped AlInP layer (5) on the n-type cladding layer;
providing an AlGaInP active layer (6) on the first undoped AlInP layer;
providing a second undoped AlInP layer (7) on the active layer;
providing a p-type intermediate layer (8) on the second undoped AlInP layer; and
growing on the p-type intermediate layer a zinc-doped p-type GaP layer (9) serving as a window layer, at 730°
C. or higher and at a growth rate of 7.8 μ
m/hour or more.
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7. A light-emitting diode device comprising
a semiconductor substrate (2) having on its rear surface a first electrode (30); -
a semiconductor layer (24) formed on the semiconductor substrate and including a light-emitting section (22) formed of AlInGaP and a window layer (23) formed atop the light-emitting section;
a distribution electrode (32) formed to extend along a portion of a surface of the window layer and kept in ohmic contact with the window layer;
a transparent, electrically conductive film (29) formed to cover the surface of the window layer and the distribution electrode and establishing electrical conduction with the distribution electrode; and
a pad electrode (31) formed on a portion of a surface of the transparent, electrically conductive film and establishing electrical conduction with the electrically conductive film. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method for producing a light-emitting diode device comprising the steps of:
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epitaxially growing on a single-crystal substrate (21) a semiconductor layer (24) including a light-emitting section (22) formed of AlInGaP and a p-type window layer (23) atop the light-emitting section;
forming a distribution electrode (32) on a portion of a surface of the window layer and in ohmic contact with the window layer;
forming a transparent, electrically conductive film (29) to cover the surface of the window layer and the distribution electrode and establish electrical conduction with the distribution electrode; and
forming a pad electrode (31) on a portion of a surface of the transparent, electrically conductive film to establish electrical conduction with the electrically conductive film. - View Dependent Claims (24, 25, 26)
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Specification