PROTECTING SILICON GERMANIUM SIDEWALL WITH SILICON FOR STRAINED SILICON SILICON MOSFETS
First Claim
Patent Images
1. A semiconductor structure, comprising:
- a substrate;
a raised source region on the substrate;
a raised drain region on the substrate; and
a first silicon layer over the raised source region and a second silicon layer over the raised drain region.
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Abstract
Raised Si/SiGe source and drain regions include epitaxially grown silicon on SiGe sidewalls. The epi silicon prevents adverse effects of Ge during silicidation, including Ge out diffusion and silicide line breakage. The Si also increases the active area.
29 Citations
13 Claims
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1. A semiconductor structure, comprising:
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a substrate;
a raised source region on the substrate;
a raised drain region on the substrate; and
a first silicon layer over the raised source region and a second silicon layer over the raised drain region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification